IPA65R095C7XKSA1
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- Mfr.Part #
- IPA65R095C7XKSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 650V 12A TO220-FP
- Stock
- 2,172
- In Stock ：
- 2,172
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Factory Lead Time :
- 18 Weeks
- Current - Continuous Drain (Id) @ 25°C :
- 12A Tc
- FET Type :
- N-Channel
- Vgs (Max) :
- ±20V
- Package / Case :
- TO-220-3 Full Pack
- Transistor Application :
- SWITCHING
- Published :
- 2008
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Fall Time (Typ) :
- 7 ns
- Pulsed Drain Current-Max (IDM) :
- 100A
- Number of Elements :
- 1
- Max Dual Supply Voltage :
- 650V
- Terminal Position :
- Single
- Halogen Free :
- Halogen Free
- Gate to Source Voltage (Vgs) :
- 20V
- Case Connection :
- Isolated
- Transistor Element Material :
- SILICON
- Packaging :
- Tube
- RoHS Status :
- ROHS3 Compliant
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Power Dissipation-Max :
- 34W Tc
- Continuous Drain Current (ID) :
- 12A
- Number of Terminations :
- 3
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Mount :
- Through Hole
- Operating Temperature :
- -55°C~150°C TJ
- JEDEC-95 Code :
- TO-220AB
- Turn On Delay Time :
- 14 ns
- Terminal Finish :
- Tin (Sn)
- Input Capacitance (Ciss) (Max) @ Vds :
- 2140pF @ 400V
- Series :
- CoolMOS™ C7
- Number of Pins :
- 3
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Drain-source On Resistance-Max :
- 0.095Ohm
- Gate Charge (Qg) (Max) @ Vgs :
- 45nC @ 10V
- Avalanche Energy Rating (Eas) :
- 118 mJ
- Operating Mode :
- ENHANCEMENT MODE
- Vgs(th) (Max) @ Id :
- 4V @ 590μA
- Lead Free :
- Lead Free
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Turn-Off Delay Time :
- 60 ns
- Mounting Type :
- Through Hole
- Rds On (Max) @ Id, Vgs :
- 95m Ω @ 11.8A, 10V
- JESD-609 Code :
- e3
- Rise Time :
- 12ns
- Datasheets
- IPA65R095C7XKSA1
N-Channel Tube 95m Ω @ 11.8A, 10V ±20V 2140pF @ 400V 45nC @ 10V TO-220-3 Full Pack
IPA65R095C7XKSA1 Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 118 mJ.The maximum input capacitance of this device is 2140pF @ 400V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 12A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 60 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 100A.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 14 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.With its 650V power supply, it is capable of handling a dual voltage maximum.Using drive voltage (10V), this device helps reduce its power consumption.
IPA65R095C7XKSA1 Features
the avalanche energy rating (Eas) is 118 mJ
a continuous drain current (ID) of 12A
the turn-off delay time is 60 ns
based on its rated peak drain current 100A.
IPA65R095C7XKSA1 Applications
There are a lot of Infineon Technologies
IPA65R095C7XKSA1 applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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