IPA60R650CEXKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Gate to Source Voltage (Vgs) :

20V

Published :

2014

Halogen Free :

Halogen Free

Rds On (Max) @ Id, Vgs :

650m Ω @ 2.4A, 10V

Rise Time :

8ns

Gate Charge (Qg) (Max) @ Vgs :

20.5nC @ 10V

Mount :

Through Hole

Power Dissipation-Max :

28W Tc

Packaging :

Tube

Number of Pins :

3

Package / Case :

TO-220-3 Full Pack

Vgs(th) (Max) @ Id :

3.5V @ 200µA

Number of Channels :

1

Lead Free :

Lead Free

Terminal Finish :

Tin (Sn)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Fall Time (Typ) :

11 ns

Case Connection :

Isolated

Vgs (Max) :

±20V

Mounting Type :

Through Hole

Operating Temperature :

-40°C~150°C TJ

Turn-Off Delay Time :

58 ns

Continuous Drain Current (ID) :

7A

JESD-609 Code :

e3

Drain-source On Resistance-Max :

0.65Ohm

Drain to Source Breakdown Voltage :

650V

FET Type :

N-Channel

Element Configuration :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

18 Weeks

Weight :

2.299997g

JEDEC-95 Code :

TO-220AB

Number of Terminations :

3

Transistor Element Material :

SILICON

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Series :

CoolMOS™ CE

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

7A Tc

Turn On Delay Time :

10 ns

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

440pF @ 100V

Max Dual Supply Voltage :

600V

RoHS Status :

ROHS3 Compliant

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Elements :

1

Pbfree Code :

yes

ECCN Code :

EAR99