IPA60R520CP

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Avalanche Energy Rating (Eas) :

166 mJ

FET Type :

N-Channel

Pin Count :

3

Drain to Source Voltage (Vdss) :

600 V

Number of Elements :

1

Configuration :

SINGLE WITH BUILT-IN DIODE

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Gate to Source Voltage (Vgs) :

20 V

Package / Case :

TO-220-3 Full Pack

Operating Mode :

ENHANCEMENT MODE

Qualification Status :

Not Qualified

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Power Dissipation :

30 W

Continuous Drain Current (ID) :

6.8 A

Package :

Bulk

Technology :

MOSFET (Metal Oxide)

Terminal Form :

THROUGH-HOLE

Transistor Element Material :

SILICON

Reach Compliance Code :

Compliant

Drive Voltage (Max Rds On, Min Rds On) :

10V

Supplier Device Package :

PG-TO220-3-111

Rds On (Max) @ Id, Vgs :

520mOhm @ 3.8A, 10V

Terminal Position :

Single

Power Dissipation-Max (Abs) :

30 W

JESD-30 Code :

R-PSFM-T3

Drain to Source Resistance :

520 mΩ

Gate Charge (Qg) (Max) @ Vgs :

31 nC @ 10 V

Continuous Drain Current Id :

6.8

Package Shape :

RECTANGULAR

Max Operating Temperature :

150 °C

Input Capacitance :

630 pF

Vgs(th) (Max) @ Id :

3.5V @ 250µA

Max Power Dissipation :

30 W

Min Operating Temperature :

-55 °C

JEDEC-95 Code :

TO-220AB

Pbfree Code :

yes

Manufacturer :

Infineon Technologies AG

Subcategory :

FET General Purpose Power

REACH SVHC :

No SVHC

Surface Mount :

No

ECCN Code :

EAR99

FET Feature :

-

Case Connection :

Isolated

Drain Current-Max (Abs) (ID) :

6.8 A

Number of Pins :

3

Current - Continuous Drain (Id) @ 25°C :

6.8A (Tc)

DS Breakdown Voltage-Min :

600 V

Power Dissipation (Max) :

30W (Tc)

Factory Lead Time :

1 Week

Transistor Application :

SWITCHING

Element Configuration :

Single

Halogen Free :

Halogen Free

Pulsed Drain Current-Max (IDM) :

17 A

Rds On Max :

520 mΩ

Polarity/Channel Type :

N-Channel

Number of Terminals :

3

Rise Time :

12 ns

Product Status :

Active

Input Capacitance (Ciss) (Max) @ Vds :

630 pF @ 100 V

Drain-source On Resistance-Max :

0.52 Ω

Channel Type :

N

Turn-Off Delay Time :

74 ns

Threshold Voltage :

3 V

Vgs (Max) :

±20V

Drain to Source Breakdown Voltage :

600 V

Operating Temperature :

-55°C ~ 150°C (TJ)

RoHS :

Compliant

Mounting Type :

Through Hole

Series :

CoolMOS™