IPA60R299CPXKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-609 Code :

e3

Published :

2008

Series :

CoolMOS™

DS Breakdown Voltage-Min :

600V

Vgs(th) (Max) @ Id :

3.5V @ 440µA

RoHS Status :

ROHS3 Compliant

Input Capacitance (Ciss) (Max) @ Vds :

1100pF @ 100V

Number of Elements :

1

Drain Current-Max (Abs) (ID) :

11A

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Packaging :

Tube

Surface Mount :

No

Rds On (Max) @ Id, Vgs :

299m Ω @ 6.6A, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

29nC @ 10V

Transistor Application :

SWITCHING

Drain-source On Resistance-Max :

0.299Ohm

Case Connection :

Isolated

Operating Mode :

ENHANCEMENT MODE

Drain to Source Voltage (Vdss) :

600V

Terminal Position :

Single

JEDEC-95 Code :

TO-220AB

Current - Continuous Drain (Id) @ 25°C :

11A Tc

Package / Case :

TO-220-3 Full Pack

Vgs (Max) :

±20V

Transistor Element Material :

SILICON

Number of Terminations :

3

Configuration :

SINGLE WITH BUILT-IN DIODE

Operating Temperature :

-55°C~150°C TJ

Pin Count :

3

Mounting Type :

Through Hole

Pbfree Code :

yes

FET Type :

N-Channel

Terminal Finish :

Tin (Sn)

Qualification Status :

Not Qualified

Power Dissipation-Max :

33W Tc

Factory Lead Time :

12 Weeks

Pulsed Drain Current-Max (IDM) :

34A

Drive Voltage (Max Rds On,Min Rds On) :

10V

JESD-30 Code :

R-PSFM-T3

Avalanche Energy Rating (Eas) :

290 mJ