IPA60R280P7XKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Rds On (Max) @ Id, Vgs :

280m Ω @ 3.8A, 10V

Drain to Source Breakdown Voltage :

600V

RoHS Status :

ROHS3 Compliant

Turn On Delay Time :

17 ns

Avalanche Energy Rating (Eas) :

38 mJ

Gate Charge (Qg) (Max) @ Vgs :

18nC @ 10V

JEDEC-95 Code :

TO-220AB

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

Not Applicable

Number of Elements :

1

Mounting Type :

Through Hole

Max Junction Temperature (Tj) :

150°C

FET Type :

N-Channel

Surface Mount :

No

Input Capacitance (Ciss) (Max) @ Vds :

761pF @ 400V

ECCN Code :

EAR99

Number of Channels :

1

Factory Lead Time :

18 Weeks

Drain-source On Resistance-Max :

0.28Ohm

Packaging :

Tube

Drive Voltage (Max Rds On,Min Rds On) :

10V

Series :

CoolMOS™ P7

Vgs (Max) :

±20V

Configuration :

SINGLE WITH BUILT-IN DIODE

Package / Case :

TO-220-3 Full Pack

Turn-Off Delay Time :

60 ns

Power Dissipation :

24W

Gate to Source Voltage (Vgs) :

20V

Number of Terminations :

3

Pulsed Drain Current-Max (IDM) :

36A

JESD-30 Code :

R-PSFM-T3

Power Dissipation-Max :

24W Tc

Continuous Drain Current (ID) :

12A

Published :

2014

Vgs(th) (Max) @ Id :

4V @ 190μA

Case Connection :

Isolated

Terminal Position :

Single

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-55°C~150°C TJ

Current - Continuous Drain (Id) @ 25°C :

12A Tc

Transistor Application :

SWITCHING

Height :

20.7mm

Transistor Element Material :

SILICON