IPA60R280CFD7XKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

18nC @ 10V

Drain-source On Resistance-Max :

0.28Ohm

Drain Current-Max (Abs) (ID) :

6A

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

Factory Lead Time :

18 Weeks

Packaging :

Tube

Drive Voltage (Max Rds On,Min Rds On) :

10V

Package / Case :

TO-220-3 Full Pack

JESD-609 Code :

e3

Terminal Position :

Single

Drain to Source Voltage (Vdss) :

650V

JEDEC-95 Code :

TO-220AB

FET Type :

N-Channel

DS Breakdown Voltage-Min :

600V

Input Capacitance (Ciss) (Max) @ Vds :

807pF @ 400V

Configuration :

SINGLE WITH BUILT-IN DIODE

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Case Connection :

Isolated

Avalanche Energy Rating (Eas) :

36 mJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Power Dissipation-Max :

24W Tc

Mounting Type :

Through Hole

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±20V

Current - Continuous Drain (Id) @ 25°C :

6A Tc

Surface Mount :

No

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

ECCN Code :

EAR99

Terminal Finish :

Tin (Sn)

Number of Terminations :

3

Pulsed Drain Current-Max (IDM) :

31A

Operating Temperature :

-55°C~150°C TJ

Vgs(th) (Max) @ Id :

4.5V @ 180μA

Published :

2014

Series :

CoolMOS™ CFD7

JESD-30 Code :

R-PSFM-T3

Rds On (Max) @ Id, Vgs :

280m Ω @ 3.6A, 10V