IPA075N15N3
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- Mfr.Part #
- IPA075N15N3
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- N-CHANNEL POWER MOSFET
- Stock
- 491
- In Stock ：
- 491
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 43A Tc
- Lead Free :
- Lead Free
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- -55°C~175°C TJ
- Pulsed Drain Current-Max (IDM) :
- 172A
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Transistor Element Material :
- SILICON
- JESD-609 Code :
- e3
- ECCN Code :
- EAR99
- Terminal Position :
- Single
- Mount :
- Through Hole
- Transistor Application :
- SWITCHING
- Number of Pins :
- 3
- Continuous Drain Current (ID) :
- 43A
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Terminal Finish :
- Tin (Sn)
- Series :
- OptiMOS™
- Input Capacitance (Ciss) (Max) @ Vds :
- 7280pF @ 75V
- Vgs (Max) :
- ±20V
- Packaging :
- Tube
- Drain-source On Resistance-Max :
- 0.0075Ohm
- Qualification Status :
- Not Qualified
- Published :
- 2008
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Number of Terminations :
- 3
- Gate to Source Voltage (Vgs) :
- 20V
- Factory Lead Time :
- 13 Weeks
- Package / Case :
- TO-220-3 Full Pack
- Rise Time :
- 25ns
- Pbfree Code :
- yes
- Avalanche Energy Rating (Eas) :
- 1000 mJ
- Drive Voltage (Max Rds On,Min Rds On) :
- 8V 10V
- Power Dissipation-Max :
- 39W Tc
- Max Dual Supply Voltage :
- 150V
- RoHS Status :
- ROHS3 Compliant
- Mounting Type :
- Through Hole
- JEDEC-95 Code :
- TO-220AB
- Turn-Off Delay Time :
- 50 ns
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 93nC @ 10V
- Pin Count :
- 3
- Turn On Delay Time :
- 22 ns
- Number of Elements :
- 1
- Rds On (Max) @ Id, Vgs :
- 7.5m Ω @ 43A, 10V
- Vgs(th) (Max) @ Id :
- 4V @ 270μA
- Fall Time (Typ) :
- 15 ns
- Halogen Free :
- Halogen Free
- Case Connection :
- Isolated
- Operating Mode :
- ENHANCEMENT MODE
- Datasheets
- IPA075N15N3
IPA075N15N3 Documents
N-Channel Tube 7.5m Ω @ 43A, 10V ±20V 7280pF @ 75V 93nC @ 10V TO-220-3 Full Pack
IPA075N15N3GXKSA1 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 1000 mJ.A device's maximum input capacitance is 7280pF @ 75V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 43A for this device. Drain current refers to the capacity of the device to conduct continuous current.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 50 ns.Its maximum pulsed drain current is 172A, which is also its maximum rating peak drainage current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 22 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.Powered by 150V, it supports maximum dual supply voltages.This device uses no drive voltage (8V 10V) to reduce its overall power consumption.
IPA075N15N3GXKSA1 Features
the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 43A
the turn-off delay time is 50 ns
based on its rated peak drain current 172A.
IPA075N15N3GXKSA1 Applications
There are a lot of Infineon Technologies
IPA075N15N3GXKSA1 applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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