IPA032N06N3 G

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Pbfree Code :

yes

Qualification Status :

Not Qualified

FET Type :

N-Channel

Vgs (Max) :

±20V

Max Dual Supply Voltage :

60V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Power Dissipation-Max :

41W Tc

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mount :

Through Hole

JESD-609 Code :

e3

Factory Lead Time :

13 Weeks

Number of Terminations :

3

Turn-Off Delay Time :

62 ns

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Pin Count :

3

Terminal Position :

Single

Power Dissipation :

41W

JEDEC-95 Code :

TO-220AB

Halogen Free :

Halogen Free

Number of Elements :

1

Series :

OptiMOS™

Current - Continuous Drain (Id) @ 25°C :

84A Tc

Number of Pins :

3

Lead Free :

Lead Free

Gate Charge (Qg) (Max) @ Vgs :

165nC @ 10V

Terminal Finish :

Tin (Sn)

Turn On Delay Time :

35 ns

Input Capacitance (Ciss) (Max) @ Vds :

13000pF @ 30V

Vgs(th) (Max) @ Id :

4V @ 118µA

Operating Temperature :

-55°C~175°C TJ

Package / Case :

TO-220-3 Full Pack

Configuration :

SINGLE WITH BUILT-IN DIODE

Packaging :

Tube

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant

Rds On (Max) @ Id, Vgs :

3.2m Ω @ 80A, 10V

Mounting Type :

Through Hole

Fall Time (Typ) :

20 ns

Rise Time :

120ns

Transistor Application :

SWITCHING

Continuous Drain Current (ID) :

84A

Gate to Source Voltage (Vgs) :

20V

Transistor Element Material :

SILICON

Published :

2008

Moisture Sensitivity Level (MSL) :

1 (Unlimited)