IPA057N08N3G
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- Mfr.Part #
- IPA057N08N3G
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- IPA057N08 - 12V-300V N-CHANNEL P
- Stock
- 4,833
- In Stock ：
- 4,833
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Rise Time :
- 42ns
- Terminal Position :
- Single
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Vgs(th) (Max) @ Id :
- 3.5V @ 90µA
- Turn On Delay Time :
- 17 ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 4750pF @ 40V
- Transistor Application :
- SWITCHING
- JEDEC-95 Code :
- TO-220AB
- JESD-609 Code :
- e3
- Factory Lead Time :
- 13 Weeks
- Pbfree Code :
- yes
- Packaging :
- Tube
- Pulsed Drain Current-Max (IDM) :
- 240A
- Number of Pins :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Case Connection :
- Isolated
- Gate to Source Voltage (Vgs) :
- 20V
- Current - Continuous Drain (Id) @ 25°C :
- 60A Tc
- Turn-Off Delay Time :
- 36 ns
- Published :
- 2013
- Operating Temperature :
- -55°C~175°C TJ
- Mount :
- Through Hole
- Fall Time (Typ) :
- 9 ns
- Number of Terminations :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Power Dissipation-Max :
- 39W Tc
- Avalanche Energy Rating (Eas) :
- 290 mJ
- Power Dissipation :
- 39W
- Series :
- OptiMOS™
- ECCN Code :
- EAR99
- Transistor Element Material :
- SILICON
- Qualification Status :
- Not Qualified
- RoHS Status :
- ROHS3 Compliant
- Operating Mode :
- ENHANCEMENT MODE
- Drive Voltage (Max Rds On,Min Rds On) :
- 6V 10V
- Mounting Type :
- Through Hole
- Number of Elements :
- 1
- Package / Case :
- TO-220-3 Full Pack
- Lead Free :
- Lead Free
- Gate Charge (Qg) (Max) @ Vgs :
- 69nC @ 10V
- Pin Count :
- 3
- Rds On (Max) @ Id, Vgs :
- 5.7m Ω @ 60A, 10V
- Halogen Free :
- Halogen Free
- Terminal Finish :
- Tin (Sn)
- Continuous Drain Current (ID) :
- 60A
- Vgs (Max) :
- ±20V
- Drain-source On Resistance-Max :
- 0.0057Ohm
- Max Dual Supply Voltage :
- 80V
- FET Type :
- N-Channel
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Datasheets
- IPA057N08N3G
N-Channel Tube 5.7m Ω @ 60A, 10V ±20V 4750pF @ 40V 69nC @ 10V TO-220-3 Full Pack
IPA057N08N3GXKSA1 Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 290 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 4750pF @ 40V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 60A. Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 36 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 240A.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 17 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Powered by 80V, it supports the maximal dual supply voltage.By using drive voltage (6V 10V), this device helps reduce its overall power consumption.
IPA057N08N3GXKSA1 Features
the avalanche energy rating (Eas) is 290 mJ
a continuous drain current (ID) of 60A
the turn-off delay time is 36 ns
based on its rated peak drain current 240A.
IPA057N08N3GXKSA1 Applications
There are a lot of Infineon Technologies
IPA057N08N3GXKSA1 applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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