IPA057N06N3G

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Mfr.Part #
IPA057N06N3G
Manufacturer
Infineon Technologies
Package / Case
Datasheet
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Description
IPA057N06 - 12V-300V N-CHANNEL P
Stock
11,553
In Stock :
11,553

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - FETs, MOSFETs - Single
Drain Current-Max (Abs) (ID) :
60A
Pin Count :
3
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Polarity/Channel Type :
N-Channel
JESD-30 Code :
R-PSFM-T3
Terminal Finish :
Tin (Sn)
Transistor Application :
SWITCHING
Number of Elements :
1
Drain-source On Resistance-Max :
0.0057Ohm
JEDEC-95 Code :
TO-220AB
JESD-609 Code :
e3
Pulsed Drain Current-Max (IDM) :
240A
Avalanche Energy Rating (Eas) :
77 mJ
DS Breakdown Voltage-Min :
60V
Operating Mode :
ENHANCEMENT MODE
Operating Temperature (Max) :
175°C
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
RoHS Status :
RoHS Compliant
Number of Terminals :
3
Terminal Position :
Single
Configuration :
SINGLE WITH BUILT-IN DIODE
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Qualification Status :
Not Qualified
Reach Compliance Code :
Compliant
Surface Mount :
No
Pbfree Code :
icon-pbfree yes
Transistor Element Material :
SILICON
ECCN Code :
EAR99
Terminal Form :
THROUGH-HOLE
Datasheets
IPA057N06N3G
Introducing Transistors - FETs, MOSFETs - Single Infineon Technologies IPA057N06N3G from Chip IC,where excellence meets affordability. This product stands out with its IPA057N06N3G pinout, IPA057N06N3G datasheet PDF, IPA057N06N3G amp .Beyond Transistors - FETs, MOSFETs - Single Infineon Technologies IPA057N06N3G ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.





IPA057N06N3 G Overview


When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 77 mJ.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 60A.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 240A.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 60V in order to maintain normal operation.

IPA057N06N3 G Features


the avalanche energy rating (Eas) is 77 mJ
based on its rated peak drain current 240A.


IPA057N06N3 G Applications


There are a lot of Infineon Technologies AG
IPA057N06N3 G applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
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