IMD9AT108

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Transistor Application :

SWITCHING

JESD-609 Code :

e1

Pbfree Code :

yes

Mount :

Surface Mount

Frequency - Transition :

250MHz

Lead Free :

Lead Free

Continuous Collector Current :

100mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tape and Reel (TR)

Max Power Dissipation :

300mW

Package / Case :

SC-74, SOT-457

Terminal Form :

Gull wing

Vce Saturation (Max) @ Ib, Ic :

300mV @ 250µA, 5mA

Time@Peak Reflow Temperature-Max (s) :

10

Width :

1.8mm

Resistor - Base (R1) :

10k Ω

Mounting Type :

Surface Mount

Number of Elements :

2

HTS Code :

8541.21.00.75

Transition Frequency :

250MHz

Number of Terminations :

6

Height :

1.2mm

Power Dissipation :

300mW

Peak Reflow Temperature (Cel) :

260

Current Rating :

100mA

Emitter Base Voltage (VEBO) :

5V

Base Part Number :

*MD9

Max Output Current :

100mA

Collector Emitter Voltage (VCEO) :

300mV

Operating Supply Voltage :

50V

Length :

3mm

Collector Emitter Breakdown Voltage :

50V

VCEsat-Max :

0.3 V

DC Current Gain (hFE) (Min) @ Ic, Vce :

68 @ 5mA 5V

Pin Count :

6

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 4.7

Number of Pins :

6

Min Operating Temperature :

-55°C

Radiation Hardening :

No

Transistor Type :

1 NPN, 1 PNP - Pre-Biased (Dual)

Current - Collector Cutoff (Max) :

500nA

REACH SVHC :

No SVHC

Published :

2010

Factory Lead Time :

13 Weeks

Max Operating Temperature :

150°C

Max Collector Current :

100mA

Polarity :

NPN, PNP

Resistor - Emitter Base (R2) :

47k Ω

hFE Min :

68

Element Configuration :

Dual

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant

Max Breakdown Voltage :

50V

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)