IGP01N120H2

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

Supplier Device Package :

PG-TO220-3-1

Collector Emitter Breakdown Voltage :

1.2 kV

Brand :

Infineon Technologies

Input Type :

Standard

Packaging :

Tube

Max Power Dissipation :

28 W

Voltage - Collector Emitter Breakdown (Max) :

1200 V

Package / Case :

TO-220-3

Maximum Operating Temperature :

+ 150 C

Power Dissipation :

28

Mounting Style :

Through Hole

Power - Max :

28 W

Contact Plating :

Tin

Height :

9.25 mm

Series :

IGP01N120

Length :

10 mm

RoHS :

Details

Width :

4.4 mm

Td (on/off) @ 25°C :

13ns/370ns

Test Condition :

800V, 1A, 241Ohm, 15V

Collector Emitter Voltage (VCEO) :

1.2 kV

Technology :

Si

Subcategory :

IGBTs

Product Status :

Active

Vce(on) (Max) @ Vge, Ic :

2.8V @ 15V, 1A

Collector Emitter Saturation Voltage :

2.2

Product Category :

IGBT Transistors

Continuous Collector Current :

3.2

IGBT Type :

-

Manufacturer :

Infineon

Element Configuration :

Single

Operating Temperature :

-40°C ~ 150°C (TJ)

Current - Collector (Ic) (Max) :

3.2 A

Halogen Free :

Halogen Free

Current - Collector Pulsed (Icm) :

3.5 A

Package :

Bulk

Max Collector Current :

3.2 A

Minimum Operating Temperature :

- 40 C

Product Type :

IGBT Transistors

Mounting Type :

Through Hole

Gate Charge :

8.6 nC

Switching Energy :

140µJ

Max Operating Temperature :

150 °C

Min Operating Temperature :

-40 °C

Number of Pins :

3

Configuration :

Single