HUF76629D3S
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- Mfr.Part #
- HUF76629D3S
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 20A TO252AA
- Stock
- 33,795
- In Stock ：
- 33,795
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Terminal Form :
- Gull wing
- Current Rating :
- 20A
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Case Connection :
- DRAIN
- Input Capacitance (Ciss) (Max) @ Vds :
- 1285pF @ 25V
- Rise Time :
- 28ns
- Lead Free :
- Lead Free
- Voltage - Rated DC :
- 100V
- Factory Lead Time :
- 8 Weeks
- Number of Pins :
- 3
- Rds On (Max) @ Id, Vgs :
- 52m Ω @ 20A, 10V
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Operating Temperature :
- -55°C~175°C TJ
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Pbfree Code :
- yes
- Drain to Source Breakdown Voltage :
- 100V
- Gate to Source Voltage (Vgs) :
- 16V
- Weight :
- 260.37mg
- Packaging :
- Tape and Reel (TR)
- Current - Continuous Drain (Id) @ 25°C :
- 20A Tc
- Number of Terminations :
- 2
- Element Configuration :
- Single
- Radiation Hardening :
- No
- Transistor Element Material :
- SILICON
- Terminal Finish :
- Tin (Sn)
- Turn-Off Delay Time :
- 67 ns
- Turn On Delay Time :
- 6.8 ns
- Transistor Application :
- SWITCHING
- JESD-609 Code :
- e3
- Fall Time (Typ) :
- 60 ns
- Operating Mode :
- ENHANCEMENT MODE
- Continuous Drain Current (ID) :
- 20A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation :
- 110W
- FET Type :
- N-Channel
- JESD-30 Code :
- R-PSSO-G2
- Power Dissipation-Max :
- 110W Tc
- Series :
- UltraFET™
- RoHS Status :
- ROHS3 Compliant
- Mounting Type :
- Surface Mount
- Vgs (Max) :
- ±16V
- JEDEC-95 Code :
- TO-252AA
- Resistance :
- 54mOhm
- Number of Elements :
- 1
- ECCN Code :
- EAR99
- Gate Charge (Qg) (Max) @ Vgs :
- 46nC @ 10V
- Mount :
- Surface Mount
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheets
- HUF76629D3S
N-Channel Tape & Reel (TR) 52m Ω @ 20A, 10V ±16V 1285pF @ 25V 46nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63
HUF76629D3ST Overview
A device's maximum input capacitance is 1285pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 20A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=100V, and this device has a drain-to-source breakdown voltage of 100V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 67 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 6.8 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 16V.This device uses no drive voltage (4.5V 10V) to reduce its overall power consumption.
HUF76629D3ST Features
a continuous drain current (ID) of 20A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 67 ns
HUF76629D3ST Applications
There are a lot of ON Semiconductor
HUF76629D3ST applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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