HUF75307D3

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

15A Tc

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

250pF @ 25V

Vgs(th) (Max) @ Id :

4V @ 250µA

DS Breakdown Voltage-Min :

55V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Case Connection :

DRAIN

Packaging :

Tube

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~175°C TJ

Series :

UltraFET™

Drive Voltage (Max Rds On,Min Rds On) :

10V

RoHS Status :

Non-RoHS Compliant

Pbfree Code :

yes

Terminal Position :

Single

Configuration :

SINGLE WITH BUILT-IN DIODE

Power Dissipation-Max :

45W Tc

Drain to Source Voltage (Vdss) :

55V

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

90m Ω @ 15A, 10V

JESD-30 Code :

R-PSIP-T3

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Mounting Type :

Through Hole

Transistor Application :

SWITCHING

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain Current-Max (Abs) (ID) :

15A

Vgs (Max) :

±20V

Terminal Finish :

Tin

Qualification Status :

COMMERCIAL

Transistor Element Material :

SILICON

FET Type :

N-Channel

Number of Terminations :

3

JESD-609 Code :

e3

Surface Mount :

No

Drain-source On Resistance-Max :

0.09Ohm

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 20V