HUF76609D3ST

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

3V @ 250µA

JESD-609 Code :

e3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~175°C TJ

Weight :

260.37mg

Transistor Application :

SWITCHING

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

JESD-30 Code :

R-PSSO-G2

Power Dissipation-Max :

49W Tc

Factory Lead Time :

8 Weeks

Turn-Off Delay Time :

30 ns

Mounting Type :

Surface Mount

Gate to Source Voltage (Vgs) :

16V

Rise Time :

41ns

Qualification Status :

Not Qualified

Case Connection :

DRAIN

Terminal Form :

Gull wing

Vgs (Max) :

±16V

Lead Free :

Lead Free

Drain to Source Breakdown Voltage :

100V

Number of Elements :

1

Turn On Delay Time :

10 ns

Power Dissipation :

49W

Current - Continuous Drain (Id) @ 25°C :

10A Tc

Transistor Element Material :

SILICON

Packaging :

Tape and Reel (TR)

Contact Plating :

Tin

Voltage - Rated DC :

100V

Input Capacitance (Ciss) (Max) @ Vds :

425pF @ 25V

JEDEC-95 Code :

TO-252AA

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Reach Compliance Code :

not_compliant

Continuous Drain Current (ID) :

10A

Operating Mode :

ENHANCEMENT MODE

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

ECCN Code :

EAR99

Rds On (Max) @ Id, Vgs :

160m Ω @ 10A, 10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Pins :

3

Resistance :

160mOhm

RoHS Status :

ROHS3 Compliant

Mount :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

16nC @ 10V

Series :

UltraFET™

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Terminations :

2

Current Rating :

10A

Pbfree Code :

yes

Fall Time (Typ) :

28 ns

FET Type :

N-Channel

Element Configuration :

Single