HUF76609D3

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C~175°C TJ

Configuration :

SINGLE WITH BUILT-IN DIODE

RoHS Status :

ROHS3 Compliant

Case Connection :

DRAIN

Rds On (Max) @ Id, Vgs :

160m Ω @ 10A, 10V

Current - Continuous Drain (Id) @ 25°C :

10A Tc

Vgs(th) (Max) @ Id :

3V @ 250µA

Vgs (Max) :

±16V

Number of Terminations :

3

Drain to Source Voltage (Vdss) :

100V

Terminal Finish :

MATTE TIN

Drain-source On Resistance-Max :

0.168Ohm

Mounting Type :

Through Hole

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

N-Channel

Pbfree Code :

yes

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Terminal Position :

Single

Power Dissipation-Max :

49W Tc

JESD-30 Code :

R-PSIP-T3

Series :

UltraFET™

Input Capacitance (Ciss) (Max) @ Vds :

425pF @ 25V

Operating Mode :

ENHANCEMENT MODE

Packaging :

Tube

DS Breakdown Voltage-Min :

100V

Surface Mount :

No

Number of Elements :

1

Transistor Application :

SWITCHING

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Transistor Element Material :

SILICON

Qualification Status :

COMMERCIAL

Peak Reflow Temperature (Cel) :

260

Drain Current-Max (Abs) (ID) :

10A

Gate Charge (Qg) (Max) @ Vgs :

16nC @ 10V

JESD-609 Code :

e3

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED