HUF76407D3ST

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Mfr.Part #
HUF76407D3ST
Manufacturer
onsemi
Package / Case
TO-252-3
Datasheet
Download
Description
MOSFET N-CH 60V 12A DPAK
Stock
43,945
In Stock :
43,945

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Weight :
260.37mg
Gate to Source Voltage (Vgs) :
16V
Turn On Delay Time :
5 ns
Max Operating Temperature :
175°C
Lead Free :
Lead Free
Drain to Source Breakdown Voltage :
60V
Threshold Voltage :
1V
Factory Lead Time :
8 Weeks
JESD-30 Code :
R-PSSO-G2
Number of Elements :
1
Min Operating Temperature :
-55°C
Terminal Finish :
Tin (Sn)
Element Configuration :
Single
Transistor Application :
SWITCHING
Continuous Drain Current (ID) :
12A
Terminal Form :
Gull wing
Input Capacitance :
350pF
REACH SVHC :
No SVHC
Drain to Source Voltage (Vdss) :
60V
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Fall Time (Typ) :
45 ns
Polarity/Channel Type :
N-Channel
Package / Case :
TO-252-3
Rds On Max :
92 mΩ
Current Rating :
11A
Packaging :
Tape and Reel (TR)
Rise Time :
32ns
Power Dissipation :
38W
JEDEC-95 Code :
TO-252AA
Radiation Hardening :
No
Number of Terminations :
2
Turn-Off Delay Time :
43 ns
Drain to Source Resistance :
77mOhm
Pbfree Code :
yes
RoHS Status :
ROHS3 Compliant
Case Connection :
DRAIN
Lifecycle Status :
ACTIVE (Last Updated: 3 days ago)
Number of Pins :
3
JESD-609 Code :
e3
Mount :
Surface Mount
Resistance :
92mOhm
Operating Mode :
ENHANCEMENT MODE
Max Power Dissipation :
38W
ECCN Code :
EAR99
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Voltage - Rated DC :
60V
Datasheets
HUF76407D3ST
Introducing Transistors - FETs, MOSFETs - Single onsemi HUF76407D3ST from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-252-3, Number of Terminations:2, Number of Pins:3, HUF76407D3ST pinout, HUF76407D3ST datasheet PDF, HUF76407D3ST amp .Beyond Transistors - FETs, MOSFETs - Single onsemi HUF76407D3ST ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi HUF76407D3ST


Tape & Reel (TR) 60V TO-252-3

HUF76407D3ST Overview


The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 12A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=60V. And this device has 60V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 43 ns. Drain to Source Resistance is the resistance between the drain and the source of a MOSFET when a specific gate-to-source voltage (VGS) is applied to bias the device to the on state, and the resistance of this device is 77mOhm. Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 5 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 16V.Threshold voltage is the point at which an electrical device is set to activate any one of its operations, and this transistor has 1V threshold voltage. Operating this transistor requires a 60V drain to source voltage (Vdss).

HUF76407D3ST Features


a continuous drain current (ID) of 12A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 43 ns
single MOSFETs transistor is 77mOhm
a threshold voltage of 1V
a 60V drain to source voltage (Vdss)


HUF76407D3ST Applications


There are a lot of ON Semiconductor
HUF76407D3ST applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
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