HUF76013D3S

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Case Connection :

DRAIN

Vgs (Max) :

±20V

RoHS Status :

ROHS3 Compliant

Power Dissipation-Max :

50W Tc

Drain to Source Voltage (Vdss) :

20V

FET Type :

N-Channel

Terminal Finish :

MATTE TIN

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Qualification Status :

COMMERCIAL

Number of Terminations :

2

DS Breakdown Voltage-Min :

20V

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

JESD-30 Code :

R-PSSO-G2

Packaging :

Tube

Surface Mount :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pbfree Code :

yes

Pin Count :

4

Current - Continuous Drain (Id) @ 25°C :

20A Tc

Peak Reflow Temperature (Cel) :

260

Terminal Position :

Single

JESD-609 Code :

e3

Rds On (Max) @ Id, Vgs :

22m Ω @ 20A, 10V

Terminal Form :

Gull wing

Mounting Type :

Surface Mount

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~150°C TJ

Gate Charge (Qg) (Max) @ Vgs :

17nC @ 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain Current-Max (Abs) (ID) :

20A

Drain-source On Resistance-Max :

0.03Ohm

Operating Mode :

ENHANCEMENT MODE

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Number of Elements :

1

Input Capacitance (Ciss) (Max) @ Vds :

624pF @ 20V

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

3V @ 250µA

Series :

UltraFET™

JEDEC-95 Code :

TO-252AA