HUF75939P3
- Mfr.Part #
- HUF75939P3
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 200V 22A TO220-3
- Stock
- 10,384
- In Stock :
- 10,384
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Rds On (Max) @ Id, Vgs :
- 125m Ω @ 22A, 10V
- Pbfree Code :
- yes
- JEDEC-95 Code :
- TO-220AB
- Transistor Application :
- SWITCHING
- JESD-30 Code :
- R-PSFM-T3
- Drain Current-Max (Abs) (ID) :
- 22A
- Current - Continuous Drain (Id) @ 25°C :
- 22A Tc
- Terminal Finish :
- MATTE TIN
- Number of Terminations :
- 3
- Input Capacitance (Ciss) (Max) @ Vds :
- 2.2pF @ 25V
- Gate Charge (Qg) (Max) @ Vgs :
- 152nC @ 20V
- Vgs (Max) :
- ±20V
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Case Connection :
- DRAIN
- Operating Temperature :
- -55°C~175°C TJ
- Transistor Element Material :
- SILICON
- Operating Mode :
- ENHANCEMENT MODE
- Qualification Status :
- COMMERCIAL
- Drain-source On Resistance-Max :
- 0.125Ohm
- Power Dissipation-Max :
- 180W Tc
- DS Breakdown Voltage-Min :
- 200V
- Reach Compliance Code :
- Unknown
- Series :
- UltraFET™
- Time@Peak Reflow Temperature-Max (s) :
- Not Applicable
- Surface Mount :
- No
- Peak Reflow Temperature (Cel) :
- Not Applicable
- JESD-609 Code :
- e3
- Terminal Position :
- Single
- Drain to Source Voltage (Vdss) :
- 200V
- RoHS Status :
- ROHS3 Compliant
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Package / Case :
- TO-220-3
- FET Type :
- N-Channel
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Number of Elements :
- 1
- Packaging :
- Tube
- Mounting Type :
- Through Hole
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- HUF75939P3

N-Channel Tube 125m Ω @ 22A, 10V ±20V 2.2pF @ 25V 152nC @ 20V 200V TO-220-3
HUF75939P3 Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 2.2pF @ 25V is its maximum input capacitance.Drain current refers to the maximum continuous current a device can conduct, and it is 22A.Normal operation requires that the DS breakdown voltage remain above 200V.For this transistor to work, a voltage 200V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
HUF75939P3 Features
a 200V drain to source voltage (Vdss)
HUF75939P3 Applications
There are a lot of Rochester Electronics, LLC
HUF75939P3 applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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