HUF75645S3ST

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Gate Charge (Qg) (Max) @ Vgs :

238nC @ 20V

Number of Pins :

3

Nominal Vgs :

4 V

JESD-609 Code :

e3

Resistance :

14mOhm

REACH SVHC :

No SVHC

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

Drain to Source Breakdown Voltage :

100V

Length :

10.67mm

Factory Lead Time :

8 Weeks

Continuous Drain Current (ID) :

75mA

Current Rating :

75A

Voltage - Rated DC :

100V

Gate to Source Voltage (Vgs) :

20V

Rds On (Max) @ Id, Vgs :

14m Ω @ 75A, 10V

Element Configuration :

Single

Width :

4.83mm

Packaging :

Tape and Reel (TR)

Threshold Voltage :

4V

Number of Elements :

1

ECCN Code :

EAR99

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Mount :

Surface Mount

Pbfree Code :

yes

Operating Temperature :

-55°C~175°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn On Delay Time :

14 ns

Rise Time :

117ns

Power Dissipation :

310W

Height :

11.33mm

Current - Continuous Drain (Id) @ 25°C :

75A Tc

Vgs(th) (Max) @ Id :

4V @ 250µA

Number of Terminations :

2

Operating Mode :

ENHANCEMENT MODE

Series :

UltraFET™

Weight :

1.31247g

Terminal Form :

Gull wing

Lead Free :

Lead Free

Terminal Finish :

Tin (Sn)

Input Capacitance (Ciss) (Max) @ Vds :

3790pF @ 25V

Mounting Type :

Surface Mount

JESD-30 Code :

R-PSSO-G2

FET Type :

N-Channel

Radiation Hardening :

No

Vgs (Max) :

±20V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Published :

2002

Fall Time (Typ) :

97 ns

Power Dissipation-Max :

310W Tc

Turn-Off Delay Time :

41 ns

Case Connection :

DRAIN