HUF75645P3

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Gate to Source Voltage (Vgs) :

20V

Voltage - Rated DC :

100V

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

Current Rating :

75A

Published :

2002

Power Dissipation-Max :

310W Tc

Factory Lead Time :

6 Weeks

Packaging :

Tube

Gate Charge (Qg) (Max) @ Vgs :

238nC @ 20V

Resistance :

14mOhm

Mount :

Through Hole

Number of Pins :

3

Input Capacitance (Ciss) (Max) @ Vds :

3790pF @ 25V

Mounting Type :

Through Hole

Operating Temperature :

-55°C~175°C TJ

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Elements :

1

Vgs(th) (Max) @ Id :

4V @ 250µA

Lead Free :

Lead Free

Number of Terminations :

3

Voltage :

100V

Current :

75A

Turn On Delay Time :

14 ns

Threshold Voltage :

4V

Pbfree Code :

yes

ECCN Code :

EAR99

Length :

10.67mm

Drain to Source Breakdown Voltage :

100V

JEDEC-95 Code :

TO-220AB

FET Type :

N-Channel

Terminal Finish :

Tin (Sn)

Element Configuration :

Single

Power Dissipation :

310W

JESD-609 Code :

e3

Height :

16.3mm

Rds On (Max) @ Id, Vgs :

14m Ω @ 75A, 10V

Vgs (Max) :

±20V

Current - Continuous Drain (Id) @ 25°C :

75A Tc

Continuous Drain Current (ID) :

75A

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Transistor Element Material :

SILICON

Weight :

4.535924g

Turn-Off Delay Time :

41 ns

Case Connection :

DRAIN

Width :

4.7mm

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

REACH SVHC :

No SVHC

Radiation Hardening :

No

Series :

UltraFET™

Package / Case :

TO-220-3

Fall Time (Typ) :

97 ns

Rise Time :

117ns