HUF75637P3

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Voltage (Vdss) :

100V

Drive Voltage (Max Rds On,Min Rds On) :

10V

RoHS Status :

ROHS3 Compliant

JESD-609 Code :

e3

Input Capacitance (Ciss) (Max) @ Vds :

1.7pF @ 25V

DS Breakdown Voltage-Min :

100V

Number of Elements :

1

Drain Current-Max (Abs) (ID) :

44A

Gate Charge (Qg) (Max) @ Vgs :

108nC @ 20V

Time@Peak Reflow Temperature-Max (s) :

Not Applicable

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~175°C TJ

Operating Mode :

ENHANCEMENT MODE

Pbfree Code :

yes

JESD-30 Code :

R-PSFM-T3

Terminal Finish :

MATTE TIN

Drain-source On Resistance-Max :

0.03Ohm

Vgs (Max) :

±20V

JEDEC-95 Code :

TO-220AB

Peak Reflow Temperature (Cel) :

Not Applicable

Transistor Application :

SWITCHING

Terminal Position :

Single

Mounting Type :

Through Hole

Case Connection :

DRAIN

FET Type :

N-Channel

Surface Mount :

No

Current - Continuous Drain (Id) @ 25°C :

44A Tc

Number of Terminations :

3

Power Dissipation-Max :

155W Tc

Configuration :

SINGLE WITH BUILT-IN DIODE

Rds On (Max) @ Id, Vgs :

30m Ω @ 44A, 10V

Qualification Status :

COMMERCIAL

Vgs(th) (Max) @ Id :

4V @ 250µA

Series :

UltraFET™

Reach Compliance Code :

Unknown

Package / Case :

TO-220-3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tube