HUF75329D3

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

Operating Temperature :

-55°C~175°C TJ

Rds On (Max) @ Id, Vgs :

26m Ω @ 20A, 10V

Mount :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

20A Tc

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

10V

Fall Time (Typ) :

33 ns

Power Dissipation :

128W

REACH SVHC :

No SVHC

Vgs(th) (Max) @ Id :

4V @ 250µA

Terminal Form :

Gull wing

Packaging :

Tape and Reel (TR)

Length :

6.73mm

Width :

2.39mm

Turn-Off Delay Time :

10 ns

Drain to Source Breakdown Voltage :

55V

Terminal Finish :

Tin (Sn)

Nominal Vgs :

4 V

JESD-609 Code :

e3

Element Configuration :

Single

Gate Charge (Qg) (Max) @ Vgs :

65nC @ 20V

Number of Terminations :

2

Rise Time :

30ns

Continuous Drain Current (ID) :

20A

Turn On Delay Time :

7 ns

Vgs (Max) :

±20V

Voltage - Rated DC :

55V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Height :

7.49mm

RoHS Status :

ROHS3 Compliant

Resistance :

26mOhm

Radiation Hardening :

No

Case Connection :

DRAIN

Pbfree Code :

yes

Published :

2002

Number of Pins :

3

Input Capacitance (Ciss) (Max) @ Vds :

1060pF @ 25V

Current Rating :

20A

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Series :

UltraFET™

Power Dissipation-Max :

128W Tc

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Factory Lead Time :

8 Weeks

Transistor Element Material :

SILICON

JESD-30 Code :

R-PSSO-G2

JEDEC-95 Code :

TO-252AA

Lead Free :

Lead Free

ECCN Code :

EAR99

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

Weight :

260.37mg

Mounting Type :

Surface Mount

Gate to Source Voltage (Vgs) :

20V