HN1C01FE-GR,LF

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Mfr.Part #
HN1C01FE-GR,LF
Manufacturer
Toshiba Electronic Devices and Storage Corporation
Package / Case
SOT-563, SOT-666
Datasheet
Download
Description
TRANS 2NPN 50V 0.15A ES6
Stock
52,047
In Stock :
52,047

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Manufacturer :
Toshiba Electronic Devices and Storage Corporation
Product Category :
Transistors - Bipolar (BJT) - Arrays
Current - Collector Cutoff (Max) :
100nA ICBO
Vce Saturation (Max) @ Ib, Ic :
250mV @ 10mA, 100mA
Collector Emitter Breakdown Voltage :
50V
Package / Case :
SOT-563, SOT-666
Operating Temperature :
150°C TJ
Collector Emitter Voltage (VCEO) :
250mV
Packaging :
Tape and Reel (TR)
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Max Breakdown Voltage :
50V
Max Power Dissipation :
100mW
Power - Max :
100mW
Supplier Device Package :
ES6
Mounting Type :
Surface Mount
Published :
2014
Transistor Type :
2 NPN (Dual)
Frequency - Transition :
80MHz
Mount :
Surface Mount
Voltage - Collector Emitter Breakdown (Max) :
50V
RoHS Status :
RoHS Compliant
Factory Lead Time :
12 Weeks
DC Current Gain (hFE) (Min) @ Ic, Vce :
200 @ 2mA 6V
Current - Collector (Ic) (Max) :
150mA
Max Collector Current :
150mA
Datasheets
HN1C01FE-GR,LF
Introducing Transistors - Bipolar (BJT) - Arrays Toshiba Electronic Devices and Storage Corporation HN1C01FE-GR,LF from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:SOT-563, SOT-666, Operating Temperature:150°C TJ, Mounting Type:Surface Mount, HN1C01FE-GR,LF pinout, HN1C01FE-GR,LF datasheet PDF, HN1C01FE-GR,LF amp .Beyond Transistors - Bipolar (BJT) - Arrays Toshiba Electronic Devices and Storage Corporation HN1C01FE-GR,LF ,we also offer NCV1413BDR2G, ZXTD4591E6TA, ZXTD6717E6TA, Our vast inventory has you covered. Contact us now for immediate solutions.

Toshiba Electronic Devices and Storage Corporation HN1C01FE-GR,LF


HN1C01FE-GR,LF datasheet pdf and Transistors - Bipolar (BJT) - Arrays product details from Toshiba Semiconductor and Storage stock available at

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