HAT1069C-EL-E

Manufacturer :

Intersil (Renesas Electronics Corporation)

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-609 Code :

e6

Transistor Application :

SWITCHING

DS Breakdown Voltage-Min :

12V

ECCN Code :

EAR99

Gate Charge (Qg) (Max) @ Vgs :

16nC @ 4.5V

Peak Reflow Temperature (Cel) :

260

Vgs(th) (Max) @ Id :

1.2V @ 1mA

Package / Case :

6-SMD, Flat Leads

Configuration :

SINGLE WITH BUILT-IN DIODE AND RESISTOR

Published :

2007

Drain-source On Resistance-Max :

0.093Ohm

Number of Elements :

1

RoHS Status :

RoHS Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-30 Code :

R-PDSO-F6

Power Dissipation-Max :

900mW Ta

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Mounting Type :

Surface Mount

FET Type :

P-Channel

Pin Count :

6

Pbfree Code :

yes

Vgs (Max) :

±8V

Terminal Position :

Dual

Qualification Status :

Not Qualified

Drain Current-Max (Abs) (ID) :

4A

Packaging :

Tape and Reel (TR)

Reach Compliance Code :

Compliant

Time@Peak Reflow Temperature-Max (s) :

20

Number of Terminations :

6

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

4A Ta

Rds On (Max) @ Id, Vgs :

52m Ω @ 1.5A, 4.5V

Operating Temperature :

150°C

Input Capacitance (Ciss) (Max) @ Vds :

1380pF @ 10V

Terminal Finish :

Tin/Bismuth (Sn/Bi)

Drain to Source Voltage (Vdss) :

12V

Transistor Element Material :

SILICON

Surface Mount :

yes