HAT1044M-EL-E
- Mfr.Part #
- HAT1044M-EL-E
- Manufacturer
- Renesas Electronics Corporation
- Package / Case
- SOT-23-6 Thin, TSOT-23-6
- Datasheet
- Download
- Description
- HAT1044M-EL-E - SILICON P CHANNE
- Stock
- 2,408
- In Stock :
- 2,408
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- Manufacturer :
- Renesas Electronics Corporation
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Mounting Type :
- Surface Mount
- Vgs (Max) :
- ±20V
- Rds On (Max) @ Id, Vgs :
- 60mOhm @ 3A, 10V
- FET Type :
- P-Channel
- Product Status :
- Obsolete
- Drive Voltage (Max Rds On, Min Rds On) :
- 4.5V, 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 600 pF @ 10 V
- Operating Mode :
- ENHANCEMENT MODE
- Pin Count :
- 6
- DS Breakdown Voltage-Min :
- 30 V
- Terminal Position :
- Dual
- Package / Case :
- SOT-23-6 Thin, TSOT-23-6
- ECCN Code :
- EAR99
- Drain Current-Max (Abs) (ID) :
- 4.5 A
- Brand Name :
- Renesas
- Terminal Form :
- Gull wing
- Reach Compliance Code :
- Compliant
- Supplier Device Package :
- 6-TSOP
- Number of Terminals :
- 6
- Power Dissipation (Max) :
- 1.05W (Ta)
- Current - Continuous Drain (Id) @ 25°C :
- 4.5A (Ta)
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- JESD-30 Code :
- R-PDSO-G6
- Subcategory :
- Other Transistors
- Series :
- -
- Number of Elements :
- 1
- Pbfree Code :
- yes
- Drain-source On Resistance-Max :
- 0.105 Ω
- Transistor Element Material :
- SILICON
- Polarity/Channel Type :
- P-Channel
- Manufacturer :
- Renesas Electronics Corporation
- Qualification Status :
- Not Qualified
- Package Shape :
- RECTANGULAR
- Gate Charge (Qg) (Max) @ Vgs :
- 13 nC @ 10 V
- Transistor Application :
- SWITCHING
- Surface Mount :
- yes
- Power Dissipation-Max (Abs) :
- 2 W
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Operating Temperature :
- 150°C
- Drain to Source Voltage (Vdss) :
- 30 V
- FET Feature :
- -
- Pulsed Drain Current-Max (IDM) :
- 18 A
- Vgs(th) (Max) @ Id :
- 2.5V @ 1mA
- Package :
- Bulk
- Datasheets
- HAT1044M-EL-E
P-Channel 60mOhm @ 3A, 10V ±20V 600 pF @ 10 V 13 nC @ 10 V 30 V SOT-23-6 Thin, TSOT-23-6
HAT1044M-EL-E Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 600 pF @ 10 V.A device's drain current is its maximum continuous current, and this device's drain current is 4.5 A.A maximum pulsed drain current of 18 A is the maximum peak drain current rated for this device.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 30 V.In order to operate this transistor, a voltage of 30 V is needed from the drain to the source (Vdss).
HAT1044M-EL-E Features
based on its rated peak drain current 18 A.
a 30 V drain to source voltage (Vdss)
HAT1044M-EL-E Applications
There are a lot of Renesas
HAT1044M-EL-E applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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