HAT1044M-EL-E

Manufacturer :

Renesas Electronics Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

-

Number of Terminals :

6

Configuration :

SINGLE WITH BUILT-IN DIODE

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V

Subcategory :

Other Transistors

Manufacturer :

Renesas Electronics Corporation

Qualification Status :

Not Qualified

Power Dissipation (Max) :

1.05W (Ta)

Pulsed Drain Current-Max (IDM) :

18 A

Rds On (Max) @ Id, Vgs :

60mOhm @ 3A, 10V

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Terminal Position :

Dual

FET Technology :

METAL-OXIDE SEMICONDUCTOR

FET Type :

P-Channel

Terminal Form :

Gull wing

Product Status :

Obsolete

Supplier Device Package :

6-TSOP

Mounting Type :

Surface Mount

Reach Compliance Code :

Compliant

Brand Name :

Renesas

Vgs (Max) :

±20V

Input Capacitance (Ciss) (Max) @ Vds :

600 pF @ 10 V

Pin Count :

6

Drain Current-Max (Abs) (ID) :

4.5 A

Operating Temperature :

150°C

Transistor Application :

SWITCHING

Power Dissipation-Max (Abs) :

2 W

Drain-source On Resistance-Max :

0.105 Ω

FET Feature :

-

Gate Charge (Qg) (Max) @ Vgs :

13 nC @ 10 V

Surface Mount :

yes

Current - Continuous Drain (Id) @ 25°C :

4.5A (Ta)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Vgs(th) (Max) @ Id :

2.5V @ 1mA

JESD-30 Code :

R-PDSO-G6

Polarity/Channel Type :

P-Channel

Package :

Bulk

Drain to Source Voltage (Vdss) :

30 V

Number of Elements :

1

ECCN Code :

EAR99

Transistor Element Material :

SILICON

DS Breakdown Voltage-Min :

30 V

Operating Mode :

ENHANCEMENT MODE

Pbfree Code :

yes

Package Shape :

RECTANGULAR