FZT789ATC
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- Mfr.Part #
- FZT789ATC
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS PNP 25V 3A SOT223-3
- Stock
- 8,589
- In Stock ：
- 8,589
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- JESD-609 Code :
- e3
- Case Connection :
- COLLECTOR
- RoHS Status :
- RoHS Compliant
- JESD-30 Code :
- R-PDSO-G4
- Configuration :
- Single
- Reach Compliance Code :
- Unknown
- Number of Terminations :
- 4
- Terminal Position :
- Dual
- Terminal Form :
- Gull wing
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 100mA, 3A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mount :
- Surface Mount
- Collector Emitter Voltage (VCEO) :
- 500mV
- Current Rating :
- -2A
- Lead Free :
- Lead Free
- Base Part Number :
- FZT789
- Max Collector Current :
- 3A
- Gain Bandwidth Product :
- 100MHz
- Peak Reflow Temperature (Cel) :
- 260
- Weight :
- 7.994566mg
- Mounting Type :
- Surface Mount
- Packaging :
- Tape and Reel (TR)
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Collector Emitter Breakdown Voltage :
- 25V
- Current - Collector Cutoff (Max) :
- 100nA
- Polarity/Channel Type :
- PNP
- Transistor Application :
- SWITCHING
- Voltage - Rated DC :
- -25V
- Transition Frequency :
- 100MHz
- REACH SVHC :
- No SVHC
- Collector Base Voltage (VCBO) :
- -25V
- Qualification Status :
- Not Qualified
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 300 @ 10mA 2V
- Number of Elements :
- 1
- Transistor Type :
- PNP
- Terminal Finish :
- MATTE TIN
- Package / Case :
- TO-261-4, TO-261AA
- Transistor Element Material :
- SILICON
- Operating Temperature :
- -55°C~150°C TJ
- HTS Code :
- 8541.29.00.75
- Continuous Collector Current :
- -3A
- Current - Collector (Ic) (Max) :
- 3A
- Max Power Dissipation :
- 2W
- Emitter Base Voltage (VEBO) :
- -5V
- ECCN Code :
- EAR99
- Datasheets
- FZT789ATC
PNP -55°C~150°C TJ 100nA 1 Elements 4 Terminations SILICON PNP TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
FZT789ATC Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 300 @ 10mA 2V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 100mA, 3A.In order to achieve high efficiency, the continuous collector voltage should be kept at -3A.If the emitter base voltage is kept at -5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -2A.A transition frequency of 100MHz is present in the part.Collector current can be as low as 3A volts at its maximum.
FZT789ATC Features
the DC current gain for this device is 300 @ 10mA 2V
the vce saturation(Max) is 500mV @ 100mA, 3A
the emitter base voltage is kept at -5V
the current rating of this device is -2A
a transition frequency of 100MHz
FZT789ATC Applications
There are a lot of Diodes Incorporated
FZT789ATC applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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