FZT788BTA
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- Mfr.Part #
- FZT788BTA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS PNP 15V 3A SOT223-3
- Stock
- 120,318
- In Stock ：
- 120,318
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Length :
- 6.7mm
- Operating Temperature :
- -55°C~150°C TJ
- Collector Base Voltage (VCBO) :
- 15V
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Transistor Type :
- PNP
- Number of Terminations :
- 4
- Voltage - Rated DC :
- -15V
- Max Collector Current :
- 3A
- Lead Free :
- Lead Free
- Height :
- 1.65mm
- Mount :
- Surface Mount
- Transistor Application :
- SWITCHING
- Terminal Finish :
- Matte Tin (Sn)
- Transition Frequency :
- 100MHz
- Terminal Position :
- Dual
- Factory Lead Time :
- 15 Weeks
- Mounting Type :
- Surface Mount
- Max Power Dissipation :
- 2W
- RoHS Status :
- ROHS3 Compliant
- Terminal Form :
- Gull wing
- JESD-609 Code :
- e3
- Published :
- 2006
- Pbfree Code :
- No
- ECCN Code :
- EAR99
- Width :
- 3.7mm
- Current Rating :
- -3A
- REACH SVHC :
- No SVHC
- Number of Elements :
- 1
- Peak Reflow Temperature (Cel) :
- 260
- Case Connection :
- COLLECTOR
- Base Part Number :
- FZT788
- Packaging :
- Tape and Reel (TR)
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 3A
- Element Configuration :
- Single
- Package / Case :
- TO-261-4, TO-261AA
- Power Dissipation :
- 2W
- Frequency :
- 100MHz
- Number of Pins :
- 4
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Radiation Hardening :
- No
- Collector Emitter Voltage (VCEO) :
- 15V
- Collector Emitter Saturation Voltage :
- -500mV
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Transistor Element Material :
- SILICON
- Collector Emitter Breakdown Voltage :
- 15V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 500 @ 10mA 2V
- Polarity/Channel Type :
- PNP
- Max Breakdown Voltage :
- 15V
- Gain Bandwidth Product :
- 100MHz
- Weight :
- 7.994566mg
- Emitter Base Voltage (VEBO) :
- 5V
- Datasheets
- FZT788BTA
PNP -55°C~150°C TJ 100nA ICBO 1 Elements 4 Terminations SILICON PNP TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
FZT788BTA Overview
This device has a DC current gain of 500 @ 10mA 2V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of -500mV allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 5V to achieve high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is -3A.In this part, there is a transition frequency of 100MHz.As a result, it can handle voltages as low as 15V volts.The maximum collector current is 3A volts.
FZT788BTA Features
the DC current gain for this device is 500 @ 10mA 2V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 50mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is -3A
a transition frequency of 100MHz
FZT788BTA Applications
There are a lot of Diodes Incorporated
FZT788BTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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