FZT1151ATA
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- Mfr.Part #
- FZT1151ATA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS PNP 40V 3A SOT223-3
- Stock
- 247
- In Stock ：
- 247
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Length :
- 6.7mm
- Continuous Collector Current :
- -3A
- Terminal Form :
- Gull wing
- Lead Free :
- Lead Free
- Max Breakdown Voltage :
- 40V
- Peak Reflow Temperature (Cel) :
- 260
- Terminal Finish :
- Matte Tin (Sn)
- Number of Elements :
- 1
- Terminal Position :
- Dual
- Pin Count :
- 4
- Published :
- 2006
- Radiation Hardening :
- No
- Polarity/Channel Type :
- PNP
- Height :
- 1.65mm
- Operating Temperature :
- -55°C~150°C TJ
- Mounting Type :
- Surface Mount
- Collector Emitter Saturation Voltage :
- -200mV
- Package / Case :
- TO-261-4, TO-261AA
- Transition Frequency :
- 145MHz
- Case Connection :
- COLLECTOR
- Collector Base Voltage (VCBO) :
- 45V
- Emitter Base Voltage (VEBO) :
- 5V
- Max Power Dissipation :
- 2.5W
- Element Configuration :
- Single
- Voltage - Rated DC :
- -40V
- Frequency :
- 145MHz
- JESD-609 Code :
- e3
- Gain Bandwidth Product :
- 145MHz
- Number of Pins :
- 3
- Transistor Element Material :
- SILICON
- Power Dissipation :
- 2.5W
- REACH SVHC :
- No SVHC
- RoHS Status :
- ROHS3 Compliant
- Max Collector Current :
- 3A
- Factory Lead Time :
- 15 Weeks
- Width :
- 3.7mm
- ECCN Code :
- EAR99
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 250 @ 500mA 2V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Type :
- PNP
- Base Part Number :
- FZT1151A
- Collector Emitter Voltage (VCEO) :
- 40V
- Transistor Application :
- SWITCHING
- Pbfree Code :
- No
- Collector Emitter Breakdown Voltage :
- 40V
- Mount :
- Surface Mount
- Current - Collector Cutoff (Max) :
- 100nA
- Current Rating :
- -3A
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Weight :
- 7.994566mg
- Number of Terminations :
- 4
- Packaging :
- Tape and Reel (TR)
- JESD-30 Code :
- R-PDSO-G4
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 250mA, 3A
- Datasheets
- FZT1151ATA
PNP -55°C~150°C TJ 100nA 1 Elements 4 Terminations SILICON PNP TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
FZT1151ATA Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 250 @ 500mA 2V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -200mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 300mV @ 250mA, 3A.Continuous collector voltages of -3A should be maintained to achieve high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is -3A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 145MHz.Single BJT transistor can take a breakdown input voltage of 40V volts.During maximum operation, collector current can be as low as 3A volts.
FZT1151ATA Features
the DC current gain for this device is 250 @ 500mA 2V
a collector emitter saturation voltage of -200mV
the vce saturation(Max) is 300mV @ 250mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is -3A
a transition frequency of 145MHz
FZT1151ATA Applications
There are a lot of Diodes Incorporated
FZT1151ATA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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