FS25R12W1T4PBPSA1
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- Mfr.Part #
- FS25R12W1T4PBPSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- Module
- Datasheet
- Download
- Description
- IGBT MODULE 1200V 45A 205W EASY
- Stock
- 6,845
- In Stock ：
- 6,845
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - IGBTs - Modules
- Input :
- Standard
- Configuration :
- Three Phase Inverter
- RoHS Status :
- ROHS3 Compliant
- Current - Collector Cutoff (Max) :
- 1mA
- Factory Lead Time :
- 16 Weeks
- Power - Max :
- 205W
- Voltage - Collector Emitter Breakdown (Max) :
- 1200V
- Series :
- EasyPACK™
- Operating Temperature :
- -40°C~150°C
- NTC Thermistor :
- yes
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- Module
- Vce(on) (Max) @ Vge, Ic :
- 2.25V @ 15V, 25A
- IGBT Type :
- Trench Field Stop
- Mounting Type :
- Chassis Mount
- Current - Collector (Ic) (Max) :
- 45A
- Datasheets
- FS25R12W1T4PBPSA1
FS25R12W1T4PBPSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available at
FS25R12W1T4PBPSA1 Description
FS25R12W1T4PBPSA1 developed by Infineon Technologies belongs to the family of IGBT modules. It is a bipolar device with a MOS structure, which belongs to a power device with high-speed performance of power MOSFET and low-resistance performance of bipolar. It combines the advantages of power transistor (Giant Transistor-GTR) and power field effect transistor (Power MOSFET), has good characteristics, and has a wide range of applications.
FS25R12W1T4PBPSA1 Features
Energy saving
Easy installation and maintenance
Stable heat dissipation
High-efficiency diode
FS25R12W1T4PBPSA1 Applications
Rail transit
Smart grid
Aerospace
Electric vehicles
New energy equipment
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