FS25R12W1T4BOMA1
- Mfr.Part #
- FS25R12W1T4BOMA1
- Manufacturer
- Infineon Technologies
- Package / Case
- Module
- Datasheet
- Download
- Description
- IGBT MOD 1200V 45A 205W
- Stock
- 879
- In Stock :
- 879
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - IGBTs - Modules
- JESD-30 Code :
- R-XUFM-X23
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Length :
- 62.8mm
- RoHS Status :
- ROHS3 Compliant
- Case Connection :
- Isolated
- Input :
- Standard
- Mounting Type :
- Chassis Mount
- Current - Collector Cutoff (Max) :
- 1mA
- Published :
- 2002
- Number of Elements :
- 6
- Terminal Position :
- UPPER
- Contact Plating :
- Tin
- Terminal Form :
- UNSPECIFIED
- Mount :
- Screw
- Input Capacitance (Cies) @ Vce :
- 1.45nF @ 25V
- Vce(on) (Max) @ Vge, Ic :
- 2.25V @ 15V, 25A
- IGBT Type :
- Trench Field Stop
- Polarity/Channel Type :
- N-Channel
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Width :
- 33.8mm
- Pin Count :
- 23
- Turn On Time :
- 80 ns
- Number of Terminations :
- 23
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Pbfree Code :
- No
- Power - Max :
- 205W
- NTC Thermistor :
- yes
- Turn Off Time-Nom (toff) :
- 505 ns
- Height :
- 12mm
- Number of Pins :
- 18
- Voltage - Collector Emitter Breakdown (Max) :
- 1200V
- Max Collector Current :
- 45A
- Max Power Dissipation :
- 205W
- Qualification Status :
- Not Qualified
- Collector Emitter Voltage (VCEO) :
- 1.2kV
- ECCN Code :
- EAR99
- Lead Free :
- Lead Free
- Transistor Element Material :
- SILICON
- Transistor Application :
- POWER CONTROL
- Collector Emitter Saturation Voltage :
- 1.85V
- Factory Lead Time :
- 16 Weeks
- Collector Emitter Breakdown Voltage :
- 1.2kV
- Operating Temperature :
- -40°C~150°C TJ
- REACH SVHC :
- No SVHC
- Configuration :
- Three Phase Inverter
- Package / Case :
- Module
- Datasheets
- FS25R12W1T4BOMA1
FS25R12W1T4BOMA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available at
FS25R12W1T4BOMA1 Features
FS25R12W1T4BOMA1 is a single IGBT with a Voltage - Collector Emitter Breakdown (Max) of 1200V from Infineon Technologies. FS25R12W1T4BOMA1 operates between -40°C~150°C, and its Current - Collector Cutoff (Max) is 45A. The FS25R12W1T4BOMA1 has 23 pins and it is available in Module packaging way. FS25R12W1T4BOMA1 has a 1200V Voltage - Collector Emitter Breakdown (Max) value.
FS25R12W1T4BOMA1 Features
-
Collector-Emitter Voltage (VCEO): 1.2kV
-
Current - Collector Cutoff (Max): 1mA
-
Voltage - Collector Emitter Breakdown (Max): 1200V
-
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 25A
-
Collector-Emitter Saturation Voltage: 1.85V
FS25R12W1T4BOMA1 Applications
-
Power Management
-
Consumer Electronics
-
Portable Devices
-
Industrial
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