FS25R12W1T4BOMA1

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Mfr.Part #
FS25R12W1T4BOMA1
Manufacturer
Infineon Technologies
Package / Case
Module
Datasheet
Download
Description
IGBT MOD 1200V 45A 205W
Stock
879
In Stock :
879

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - IGBTs - Modules
JESD-30 Code :
R-XUFM-X23
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Length :
62.8mm
RoHS Status :
ROHS3 Compliant
Case Connection :
Isolated
Input :
Standard
Mounting Type :
Chassis Mount
Current - Collector Cutoff (Max) :
1mA
Published :
2002
Number of Elements :
6
Terminal Position :
UPPER
Contact Plating :
Tin
Terminal Form :
UNSPECIFIED
Mount :
Screw
Input Capacitance (Cies) @ Vce :
1.45nF @ 25V
Vce(on) (Max) @ Vge, Ic :
2.25V @ 15V, 25A
IGBT Type :
Trench Field Stop
Polarity/Channel Type :
N-Channel
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Width :
33.8mm
Pin Count :
23
Turn On Time :
80 ns
Number of Terminations :
23
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Pbfree Code :
No
Power - Max :
205W
NTC Thermistor :
yes
Turn Off Time-Nom (toff) :
505 ns
Height :
12mm
Number of Pins :
18
Voltage - Collector Emitter Breakdown (Max) :
1200V
Max Collector Current :
45A
Max Power Dissipation :
205W
Qualification Status :
Not Qualified
Collector Emitter Voltage (VCEO) :
1.2kV
ECCN Code :
EAR99
Lead Free :
Lead Free
Transistor Element Material :
SILICON
Transistor Application :
POWER CONTROL
Collector Emitter Saturation Voltage :
1.85V
Factory Lead Time :
16 Weeks
Collector Emitter Breakdown Voltage :
1.2kV
Operating Temperature :
-40°C~150°C TJ
REACH SVHC :
No SVHC
Configuration :
Three Phase Inverter
Package / Case :
Module
Datasheets
FS25R12W1T4BOMA1
Introducing Transistors - IGBTs - Modules Infineon Technologies FS25R12W1T4BOMA1 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Chassis Mount, Number of Terminations:23, Number of Pins:18, Operating Temperature:-40°C~150°C TJ, Package / Case:Module, FS25R12W1T4BOMA1 pinout, FS25R12W1T4BOMA1 datasheet PDF, FS25R12W1T4BOMA1 amp .Beyond Transistors - IGBTs - Modules Infineon Technologies FS25R12W1T4BOMA1 ,we also offer FS450R12KE3BOSA1, VS-GT80DA120U, FD450R12KE4PHOSA1, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies FS25R12W1T4BOMA1


FS25R12W1T4BOMA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available at

FS25R12W1T4BOMA1 Features


FS25R12W1T4BOMA1 is a single IGBT with a Voltage - Collector Emitter Breakdown (Max) of 1200V from Infineon Technologies. FS25R12W1T4BOMA1 operates between -40°C~150°C, and its Current - Collector Cutoff (Max) is 45A. The FS25R12W1T4BOMA1 has 23 pins and it is available in Module packaging way. FS25R12W1T4BOMA1 has a 1200V Voltage - Collector Emitter Breakdown (Max) value.



FS25R12W1T4BOMA1 Features


  • Collector-Emitter Voltage (VCEO): 1.2kV

  • Current - Collector Cutoff (Max): 1mA

  • Voltage - Collector Emitter Breakdown (Max): 1200V

  • Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 25A

  • Collector-Emitter Saturation Voltage: 1.85V



FS25R12W1T4BOMA1 Applications


  • Power Management

  • Consumer Electronics

  • Portable Devices

  • Industrial


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