FQU2N90TU-WS

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±30V

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

JESD-609 Code :

e3

Power Dissipation :

2.5W

Factory Lead Time :

6 Weeks

Series :

QFET®

Element Configuration :

Single

Fall Time (Typ) :

30 ns

Number of Elements :

1

Weight :

343.08mg

Number of Pins :

3

Turn-Off Delay Time :

20 ns

Rds On (Max) @ Id, Vgs :

7.2 Ω @ 850mA, 10V

Input Capacitance (Ciss) (Max) @ Vds :

500pF @ 25V

Packaging :

Tube

Drain to Source Breakdown Voltage :

900V

Current - Continuous Drain (Id) @ 25°C :

1.7A Tc

Vgs(th) (Max) @ Id :

5V @ 250μA

Lead Free :

Lead Free

Rise Time :

35ns

Radiation Hardening :

No

Power Dissipation-Max :

2.5W Ta 50W Tc

Operating Temperature :

-55°C~150°C TJ

Drive Voltage (Max Rds On,Min Rds On) :

10V

Pbfree Code :

yes

Continuous Drain Current (ID) :

1.7A

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 10V

Terminal Finish :

Tin (Sn)

RoHS Status :

ROHS3 Compliant

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Mount :

Through Hole

Mounting Type :

Through Hole

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn On Delay Time :

15 ns

Gate to Source Voltage (Vgs) :

30V

FET Type :

N-Channel