FQU2N60TU

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

JESD-30 Code :

R-PSIP-T3

Current - Continuous Drain (Id) @ 25°C :

2A Tc

Avalanche Energy Rating (Eas) :

140 mJ

Peak Reflow Temperature (Cel) :

Not Applicable

Gate Charge (Qg) (Max) @ Vgs :

11nC @ 10V

Mounting Type :

Through Hole

Vgs (Max) :

±30V

Pin Count :

3

Surface Mount :

No

Packaging :

Tube

Rds On (Max) @ Id, Vgs :

4.7 Ω @ 1A, 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Power Dissipation-Max :

2.5W Ta 45W Tc

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Qualification Status :

COMMERCIAL

Operating Temperature :

-55°C~150°C TJ

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

5V @ 250μA

Drain to Source Voltage (Vdss) :

600V

Drain Current-Max (Abs) (ID) :

2A

RoHS Status :

ROHS3 Compliant

Operating Mode :

ENHANCEMENT MODE

Terminal Position :

Single

Transistor Application :

SWITCHING

Terminal Finish :

MATTE TIN

Number of Elements :

1

Pulsed Drain Current-Max (IDM) :

8A

JESD-609 Code :

e3

Time@Peak Reflow Temperature-Max (s) :

Not Applicable

DS Breakdown Voltage-Min :

600V

Series :

QFET®

Number of Terminations :

3

Reach Compliance Code :

Unknown

Input Capacitance (Ciss) (Max) @ Vds :

350pF @ 25V

Pbfree Code :

yes

Drive Voltage (Max Rds On,Min Rds On) :

10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)