FQT4N25TF

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Turn On Delay Time :

6.8 ns

Vgs (Max) :

±30V

Rise Time :

45ns

Transistor Element Material :

SILICON

Width :

3.7mm

Package / Case :

TO-261-4, TO-261AA

Pbfree Code :

yes

Number of Elements :

1

Fall Time (Typ) :

22 ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Pins :

3

FET Type :

N-Channel

Packaging :

Tape and Reel (TR)

Gate to Source Voltage (Vgs) :

30V

Weight :

188mg

Element Configuration :

Single

ECCN Code :

EAR99

Input Capacitance (Ciss) (Max) @ Vds :

200pF @ 25V

Current - Continuous Drain (Id) @ 25°C :

830mA Tc

Lead Free :

Lead Free

Case Connection :

DRAIN

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain to Source Breakdown Voltage :

250V

Gate Charge (Qg) (Max) @ Vgs :

5.6nC @ 10V

Power Dissipation-Max :

2.5W Tc

Factory Lead Time :

10 Weeks

Length :

6.7mm

Series :

QFET®

Qualification Status :

Not Qualified

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

JESD-30 Code :

R-PDSO-G4

Voltage - Rated DC :

250V

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

1.75 Ω @ 415mA, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Surface Mount

Height :

1.7mm

Reach Compliance Code :

not_compliant

Operating Temperature :

-55°C~150°C TJ

RoHS Status :

ROHS3 Compliant

Resistance :

1.75Ohm

Current Rating :

830mA

Avalanche Energy Rating (Eas) :

52 mJ

Threshold Voltage :

5V

Vgs(th) (Max) @ Id :

5V @ 250μA

JESD-609 Code :

e3

Mounting Type :

Surface Mount

REACH SVHC :

No SVHC

Terminal Form :

Gull wing

Turn-Off Delay Time :

6.4 ns

Number of Terminations :

4

Published :

2001

Terminal Position :

Dual

Terminal Finish :

Tin (Sn)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Power Dissipation :

2.5W

Continuous Drain Current (ID) :

830mA