FQT4N20LTF

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

TO-261-4, TO-261AA

Transistor Application :

SWITCHING

Power Dissipation :

2.2W

Length :

6.5mm

RoHS Status :

ROHS3 Compliant

Threshold Voltage :

2V

Operating Temperature :

-55°C~150°C TJ

Width :

3.56mm

Current - Continuous Drain (Id) @ 25°C :

850mA Tc

Gate Charge (Qg) (Max) @ Vgs :

5.2nC @ 5V

Element Configuration :

Single

Drain Current-Max (Abs) (ID) :

0.85A

Qualification Status :

Not Qualified

Vgs(th) (Max) @ Id :

2V @ 250μA

Power Dissipation-Max :

2.2W Tc

Number of Elements :

1

Current Rating :

850mA

Series :

QFET®

Turn-Off Delay Time :

15 ns

Published :

2001

Drain to Source Breakdown Voltage :

200V

Rds On (Max) @ Id, Vgs :

1.35 Ω @ 425mA, 10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Height :

1.6mm

Voltage - Rated DC :

200V

Fall Time (Typ) :

40 ns

Vgs (Max) :

±20V

Transistor Element Material :

SILICON

FET Type :

N-Channel

JESD-30 Code :

R-PDSO-G4

Pbfree Code :

yes

Packaging :

Tape and Reel (TR)

Terminal Form :

Gull wing

Continuous Drain Current (ID) :

850mA

ECCN Code :

EAR99

REACH SVHC :

No SVHC

Number of Pins :

3

Lead Free :

Lead Free

Avalanche Energy Rating (Eas) :

52 mJ

Operating Mode :

ENHANCEMENT MODE

Contact Plating :

Tin

Terminal Position :

Dual

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Mount :

Surface Mount

Rise Time :

70ns

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Gate to Source Voltage (Vgs) :

20V

Reach Compliance Code :

not_compliant

Number of Terminations :

4

Weight :

188mg

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

Factory Lead Time :

18 Weeks

Mounting Type :

Surface Mount

Resistance :

1.35Ohm

Turn On Delay Time :

7 ns

Case Connection :

DRAIN

Input Capacitance (Ciss) (Max) @ Vds :

310pF @ 25V