FQPF9N50CT

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Mfr.Part #
FQPF9N50CT
Manufacturer
Fairchild Semiconductor
Package / Case
TO-220-3 Full Pack
Datasheet
Download
Description
MOSFET N-CH 500V 9A TO220F
Stock
3,600
In Stock :
3,600

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Manufacturer :
Fairchild Semiconductor
Product Category :
Transistors - FETs, MOSFETs - Single
Drain Current-Max (Abs) (ID) :
9A
Series :
QFET®
Transistor Application :
SWITCHING
FET Type :
N-Channel
Pulsed Drain Current-Max (IDM) :
36A
Current - Continuous Drain (Id) @ 25°C :
9A Tc
Gate Charge (Qg) (Max) @ Vgs :
35nC @ 10V
Mounting Type :
Through Hole
Number of Terminations :
3
JESD-30 Code :
R-PSFM-T3
Rds On (Max) @ Id, Vgs :
800m Ω @ 4.5A, 10V
Transistor Element Material :
SILICON
Pin Count :
3
Avalanche Energy Rating (Eas) :
360 mJ
Operating Temperature :
-55°C~150°C TJ
Time@Peak Reflow Temperature-Max (s) :
Not Applicable
JEDEC-95 Code :
TO-220AB
Package / Case :
TO-220-3 Full Pack
Drain-source On Resistance-Max :
0.8Ohm
Drive Voltage (Max Rds On,Min Rds On) :
10V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
JESD-609 Code :
e3
Configuration :
SINGLE WITH BUILT-IN DIODE
Vgs(th) (Max) @ Id :
4V @ 250µA
Vgs (Max) :
±30V
Number of Elements :
1
Case Connection :
Isolated
Packaging :
Tube
Qualification Status :
COMMERCIAL
Power Dissipation-Max :
44W Tc
Input Capacitance (Ciss) (Max) @ Vds :
1.03pF @ 25V
Peak Reflow Temperature (Cel) :
Not Applicable
Pbfree Code :
yes
Surface Mount :
No
Terminal Finish :
MATTE TIN
Operating Mode :
ENHANCEMENT MODE
Terminal Position :
Single
Drain to Source Voltage (Vdss) :
500V
RoHS Status :
ROHS3 Compliant
DS Breakdown Voltage-Min :
500V
Datasheets
FQPF9N50CT
Introducing Transistors - FETs, MOSFETs - Single Fairchild Semiconductor FQPF9N50CT from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Number of Terminations:3, Operating Temperature:-55°C~150°C TJ, Package / Case:TO-220-3 Full Pack, FQPF9N50CT pinout, FQPF9N50CT datasheet PDF, FQPF9N50CT amp .Beyond Transistors - FETs, MOSFETs - Single Fairchild Semiconductor FQPF9N50CT ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Fairchild Semiconductor FQPF9N50CT


N-Channel Tube 800m Ω @ 4.5A, 10V ±30V 1.03pF @ 25V 35nC @ 10V 500V TO-220-3 Full Pack

FQPF9N50CT Overview


This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 360 mJ.The maximum input capacitance of this device is 1.03pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.As shown in the table below, the drain current of this device is 9A.There is no pulsed drain current maximum for this device based on its rated peak drain current 36A.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 500V.The drain-to-source voltage (Vdss) of this transistor needs to be at 500V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.

FQPF9N50CT Features


the avalanche energy rating (Eas) is 360 mJ
based on its rated peak drain current 36A.
a 500V drain to source voltage (Vdss)


FQPF9N50CT Applications


There are a lot of Rochester Electronics, LLC
FQPF9N50CT applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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