FQPF11N50CF
- Mfr.Part #
- FQPF11N50CF
- Manufacturer
- onsemi
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 11A TO220F
- Stock
- 1,188
- In Stock :
- 1,188
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Input Capacitance (Ciss) (Max) @ Vds :
- 2055pF @ 25V
- Operating Mode :
- ENHANCEMENT MODE
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Rds On (Max) @ Id, Vgs :
- 550m Ω @ 5.5A, 10V
- Mounting Type :
- Through Hole
- Pulsed Drain Current-Max (IDM) :
- 44A
- Transistor Application :
- SWITCHING
- JESD-609 Code :
- e3
- Vgs (Max) :
- ±30V
- Mount :
- Through Hole
- Gate to Source Voltage (Vgs) :
- 30V
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Length :
- 10.36mm
- Fall Time (Typ) :
- 75 ns
- Weight :
- 2.27g
- Gate Charge (Qg) (Max) @ Vgs :
- 55nC @ 10V
- RoHS Status :
- ROHS3 Compliant
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Drain-source On Resistance-Max :
- 0.55Ohm
- Turn On Delay Time :
- 24 ns
- Current - Continuous Drain (Id) @ 25°C :
- 11A Tc
- FET Type :
- N-Channel
- Continuous Drain Current (ID) :
- 11A
- Turn-Off Delay Time :
- 120 ns
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Power Dissipation-Max :
- 48W Tc
- Packaging :
- Tube
- Published :
- 2013
- Height :
- 16.07mm
- Transistor Element Material :
- SILICON
- Element Configuration :
- Single
- Width :
- 4.9mm
- Number of Elements :
- 1
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Drain to Source Breakdown Voltage :
- 500V
- Pbfree Code :
- yes
- Terminal Finish :
- Tin (Sn)
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Number of Terminations :
- 3
- Power Dissipation :
- 48W
- Case Connection :
- Isolated
- Factory Lead Time :
- 9 Weeks
- Qualification Status :
- Not Qualified
- Operating Temperature :
- -55°C~150°C TJ
- Package / Case :
- TO-220-3 Full Pack
- Avalanche Energy Rating (Eas) :
- 670 mJ
- Number of Pins :
- 3
- Series :
- FRFET®
- JEDEC-95 Code :
- TO-220AB
- Reach Compliance Code :
- not_compliant
- ECCN Code :
- EAR99
- Rise Time :
- 70ns
- Datasheets
- FQPF11N50CF

N-Channel Tube 550m Ω @ 5.5A, 10V ±30V 2055pF @ 25V 55nC @ 10V TO-220-3 Full Pack
FQPF11N50CF Description
This N-channel enhanced power MOSFET FQPF11N50CF is produced using on Semiconductor's proprietary planar stripe and DMOS technology. This advanced MOSFET technology is specifically tailored to reduce on-resistance and provides excellent switching performance and high avalanche energy intensity. These devices are suitable for switching mode power supplies, active power factor correction (PFC) and electronic lamp ballasts.
FQPF11N50CF Features
11A, 500V, RDS(on) = 550mΩ(Max.) @VGS = 10 V, ID = 5.5A
Low gate charge ( Typ. 43nC)
Low Crss ( Typ. 20pF)
100% avalanche tested
Fast recovery body diode (Typ. 90ns)
FQPF11N50CF Applications
LCD TV
PDP TV
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