FQPF9N50C

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

4V @ 250µA

Current - Continuous Drain (Id) @ 25°C :

9A Tc

Continuous Drain Current (ID) :

9A

Rds On (Max) @ Id, Vgs :

850m Ω @ 4.5A, 10V

Height :

16.07mm

Qualification Status :

Not Qualified

Lead Free :

Lead Free

RoHS Status :

ROHS3 Compliant

Turn On Delay Time :

18 ns

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Rise Time :

65ns

Gate to Source Voltage (Vgs) :

30V

Number of Elements :

1

Drain Current-Max (Abs) (ID) :

9A

Threshold Voltage :

4V

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

35nC @ 10V

REACH SVHC :

No SVHC

Power Dissipation-Max :

44W Tc

FET Type :

N-Channel

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Resistance :

850mOhm

Factory Lead Time :

4 Weeks

Power Dissipation :

44W

Package / Case :

TO-220-3 Full Pack

Mount :

Through Hole

Input Capacitance (Ciss) (Max) @ Vds :

1030pF @ 25V

Weight :

2.27g

Number of Pins :

3

Series :

FRFET®

Published :

2012

Vgs (Max) :

±30V

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

3

ECCN Code :

EAR99

Width :

4.9mm

Pbfree Code :

yes

Mounting Type :

Through Hole

Transistor Application :

SWITCHING

Terminal Finish :

Tin (Sn)

Length :

10.36mm

Turn-Off Delay Time :

93 ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

JEDEC-95 Code :

TO-220AB

Operating Temperature :

-55°C~150°C TJ

Case Connection :

Isolated

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Breakdown Voltage :

500V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Element Configuration :

Single

Fall Time (Typ) :

64 ns

JESD-609 Code :

e3

Reach Compliance Code :

not_compliant

Packaging :

Tube