FQPF9N30

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Time@Peak Reflow Temperature-Max (s) :

Not Applicable

Configuration :

SINGLE WITH BUILT-IN DIODE

Rds On (Max) @ Id, Vgs :

450m Ω @ 3A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

740pF @ 25V

Gate Charge (Qg) (Max) @ Vgs :

22nC @ 10V

Peak Reflow Temperature (Cel) :

Not Applicable

Transistor Element Material :

SILICON

Terminal Position :

Single

Drain-source On Resistance-Max :

0.45Ohm

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

5V @ 250μA

Terminal Finish :

MATTE TIN

Current - Continuous Drain (Id) @ 25°C :

6A Tc

Mounting Type :

Through Hole

JESD-30 Code :

R-PSFM-T3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain Current-Max (Abs) (ID) :

6A

Drain to Source Voltage (Vdss) :

300V

Series :

QFET®

Avalanche Energy Rating (Eas) :

420 mJ

Surface Mount :

No

Number of Elements :

1

FET Type :

N-Channel

Case Connection :

Isolated

RoHS Status :

ROHS3 Compliant

Qualification Status :

COMMERCIAL

Operating Temperature :

-55°C~150°C TJ

DS Breakdown Voltage-Min :

300V

Packaging :

Tube

Number of Terminations :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pbfree Code :

yes

Transistor Application :

SWITCHING

Pulsed Drain Current-Max (IDM) :

24A

JESD-609 Code :

e3

Vgs (Max) :

±30V

Package / Case :

TO-220-3 Full Pack

Reach Compliance Code :

Unknown

Power Dissipation-Max :

42W Tc

Pin Count :

3