FQPF9N25C

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

4V @ 250µA

Case Connection :

Isolated

Drain to Source Breakdown Voltage :

250V

Factory Lead Time :

5 Weeks

Input Capacitance (Ciss) (Max) @ Vds :

710pF @ 25V

ECCN Code :

EAR99

Turn-Off Delay Time :

90 ns

JESD-609 Code :

e3

Power Dissipation :

38W

Number of Elements :

1

Pbfree Code :

yes

Mount :

Through Hole

Continuous Drain Current (ID) :

8.8A

Terminal Finish :

Tin (Sn)

Resistance :

430mOhm

Gate Charge (Qg) (Max) @ Vgs :

35nC @ 10V

Operating Temperature :

-55°C~150°C TJ

Weight :

2.27g

Turn On Delay Time :

15 ns

Vgs (Max) :

±30V

Rds On (Max) @ Id, Vgs :

430m Ω @ 4.4A, 10V

FET Type :

N-Channel

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Packaging :

Tube

Radiation Hardening :

No

Current Rating :

8.8A

Series :

QFET®

Number of Pins :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Fall Time (Typ) :

65 ns

Rise Time :

85ns

Transistor Application :

SWITCHING

Width :

4.7mm

Current - Continuous Drain (Id) @ 25°C :

8.8A Tc

Element Configuration :

Single

Package / Case :

TO-220-3 Full Pack

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

38W Tc

Avalanche Energy Rating (Eas) :

285 mJ

Mounting Type :

Through Hole

Length :

10.16mm

Height :

9.19mm

Drive Voltage (Max Rds On,Min Rds On) :

10V

JEDEC-95 Code :

TO-220AB

Number of Terminations :

3

Gate to Source Voltage (Vgs) :

30V

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

Published :

2004

Lead Free :

Lead Free

Voltage - Rated DC :

250V