FQPF8N80C

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Weight :

2.27g

Threshold Voltage :

5V

Vgs(th) (Max) @ Id :

5V @ 250μA

Transistor Element Material :

SILICON

Current Rating :

8A

Width :

4.7mm

REACH SVHC :

No SVHC

Resistance :

1.55Ohm

Gate to Source Voltage (Vgs) :

30V

ECCN Code :

EAR99

Avalanche Energy Rating (Eas) :

850 mJ

Turn On Delay Time :

40 ns

Height :

9.19mm

JESD-609 Code :

e3

Input Capacitance (Ciss) (Max) @ Vds :

2050pF @ 25V

Package / Case :

TO-220-3 Full Pack

Mounting Type :

Through Hole

Terminal Finish :

Tin (Sn)

Element Configuration :

Single

FET Type :

N-Channel

Lead Free :

Lead Free

Vgs (Max) :

±30V

Length :

10.16mm

Case Connection :

Isolated

Packaging :

Tube

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pbfree Code :

yes

Number of Terminations :

3

Current - Continuous Drain (Id) @ 25°C :

8A Tc

Series :

QFET®

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain to Source Breakdown Voltage :

800V

Fall Time (Typ) :

70 ns

Drain Current-Max (Abs) (ID) :

8A

Radiation Hardening :

No

RoHS Status :

ROHS3 Compliant

Mount :

Through Hole

Gate Charge (Qg) (Max) @ Vgs :

45nC @ 10V

Number of Pins :

3

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Voltage - Rated DC :

800V

Operating Temperature :

-55°C~150°C TJ

Continuous Drain Current (ID) :

8A

Turn-Off Delay Time :

65 ns

JEDEC-95 Code :

TO-220AB

Power Dissipation-Max :

59W Tc

Rise Time :

110ns

Factory Lead Time :

8 Weeks

Published :

2003

Rds On (Max) @ Id, Vgs :

1.55 Ω @ 4A, 10V

Transistor Application :

SWITCHING

Number of Elements :

1

Power Dissipation :

59W