FQPF8N60CYDTU

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Case Connection :

Isolated

Packaging :

Tube

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

1.255pF @ 25V

Rds On (Max) @ Id, Vgs :

1.2 Ω @ 3.75A, 10V

Number of Elements :

1

Pbfree Code :

yes

Pin Count :

3

Surface Mount :

No

Avalanche Energy Rating (Eas) :

230 mJ

Operating Mode :

ENHANCEMENT MODE

DS Breakdown Voltage-Min :

600V

Qualification Status :

COMMERCIAL

Pulsed Drain Current-Max (IDM) :

30A

Vgs (Max) :

±30V

Additional Feature :

FAST SWITCHING

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain to Source Voltage (Vdss) :

600V

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

10V

Terminal Position :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Series :

QFET®

Terminal Finish :

MATTE TIN

Vgs(th) (Max) @ Id :

4V @ 250µA

RoHS Status :

ROHS3 Compliant

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

JEDEC-95 Code :

TO-220AB

JESD-30 Code :

R-PSFM-T3

Power Dissipation-Max :

48W Tc

Current - Continuous Drain (Id) @ 25°C :

7.5A Tc

Operating Temperature :

-55°C~150°C TJ

Gate Charge (Qg) (Max) @ Vgs :

36nC @ 10V

Drain Current-Max (Abs) (ID) :

7.5A

Mounting Type :

Through Hole

JESD-609 Code :

e3

Number of Terminations :

3

Package / Case :

TO-220-3 Full Pack, Formed Leads

Configuration :

SINGLE WITH BUILT-IN DIODE