FQPF85N06

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Voltage - Rated DC :

60V

Weight :

2.27g

Operating Mode :

ENHANCEMENT MODE

Fall Time (Typ) :

170 ns

Width :

4.7mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Nominal Vgs :

4 V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Pbfree Code :

yes

Drain to Source Breakdown Voltage :

60V

Number of Terminations :

3

Height :

9.19mm

Power Dissipation :

62W

Resistance :

10MOhm

Length :

10.16mm

Qualification Status :

Not Qualified

Series :

QFET®

Terminal Finish :

Tin (Sn)

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

112nC @ 10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Vgs(th) (Max) @ Id :

4V @ 250µA

Dual Supply Voltage :

60V

Packaging :

Tube

Reach Compliance Code :

not_compliant

REACH SVHC :

No SVHC

Power Dissipation-Max :

62W Tc

JESD-609 Code :

e3

RoHS Status :

ROHS3 Compliant

Published :

2001

Transistor Application :

SWITCHING

Turn-Off Delay Time :

175 ns

Element Configuration :

Single

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Current - Continuous Drain (Id) @ 25°C :

53A Tc

Number of Pins :

3

Turn On Delay Time :

40 ns

Package / Case :

TO-220-3 Full Pack

Continuous Drain Current (ID) :

53A

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Mounting Type :

Through Hole

Vgs (Max) :

±25V

Input Capacitance (Ciss) (Max) @ Vds :

4120pF @ 25V

Operating Temperature :

-55°C~175°C TJ

Threshold Voltage :

4V

Mount :

Through Hole

Rds On (Max) @ Id, Vgs :

10m Ω @ 26.5A, 10V

Gate to Source Voltage (Vgs) :

25V

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Lead Free :

Lead Free

Case Connection :

Isolated

Factory Lead Time :

4 Weeks

Avalanche Energy Rating (Eas) :

820 mJ

Current Rating :

53A

FET Type :

N-Channel

Rise Time :

230ns