FQPF7N80

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Weight :

2.27g

Number of Elements :

1

Published :

2003

Drain to Source Breakdown Voltage :

800V

Number of Terminations :

3

Pulsed Drain Current-Max (IDM) :

26.4A

Mounting Type :

Through Hole

Current Rating :

6.6A

Voltage - Rated DC :

800V

Element Configuration :

Single

Lead Free :

Lead Free

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

Gate to Source Voltage (Vgs) :

30V

REACH SVHC :

No SVHC

Number of Pins :

3

Vgs (Max) :

±30V

Rds On (Max) @ Id, Vgs :

1.9 Ω @ 3.3A, 10V

Radiation Hardening :

No

Fall Time (Typ) :

60 ns

Length :

10.16mm

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

FET Type :

N-Channel

Rise Time :

100ns

Case Connection :

Isolated

Packaging :

Tube

RoHS Status :

ROHS3 Compliant

Mount :

Through Hole

Drive Voltage (Max Rds On,Min Rds On) :

10V

JESD-609 Code :

e3

Vgs(th) (Max) @ Id :

5V @ 250μA

Pbfree Code :

yes

ECCN Code :

EAR99

Input Capacitance (Ciss) (Max) @ Vds :

1680pF @ 25V

Width :

4.7mm

Transistor Application :

SWITCHING

JEDEC-95 Code :

TO-220AB

Threshold Voltage :

5V

Factory Lead Time :

5 Weeks

Terminal Finish :

Tin (Sn)

Series :

QFET®

Height :

9.19mm

Gate Charge (Qg) (Max) @ Vgs :

35nC @ 10V

Avalanche Energy Rating (Eas) :

580 mJ

Power Dissipation-Max :

56W Tc

Operating Temperature :

-55°C~150°C TJ

Package / Case :

TO-220-3 Full Pack

Power Dissipation :

56W

Current - Continuous Drain (Id) @ 25°C :

6.6A Tc

Turn-Off Delay Time :

50 ns

Continuous Drain Current (ID) :

6.6A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn On Delay Time :

35 ns