FQPF7N65C
- Mfr.Part #
- FQPF7N65C
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- POWER FIELD-EFFECT TRANSISTOR, 7
- Stock
- 4,012
- In Stock :
- 4,012
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- REACH SVHC :
- No SVHC
- Number of Pins :
- 3
- Turn On Delay Time :
- 20 ns
- Continuous Drain Current (ID) :
- 7A
- Rds On (Max) @ Id, Vgs :
- 1.4 Ω @ 3.5A, 10V
- Package / Case :
- TO-220-3 Full Pack
- Fall Time (Typ) :
- 55 ns
- Length :
- 10.16mm
- Power Dissipation-Max :
- 52W Tc
- Width :
- 4.7mm
- Voltage - Rated DC :
- 650V
- Turn-Off Delay Time :
- 90 ns
- Contact Plating :
- Tin
- Vgs (Max) :
- ±30V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- FET Type :
- N-Channel
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Current Rating :
- 7A
- Lead Free :
- Lead Free
- Element Configuration :
- Single
- Drain to Source Breakdown Voltage :
- 650V
- Mounting Type :
- Through Hole
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Weight :
- 2.27g
- Qualification Status :
- Not Qualified
- Current - Continuous Drain (Id) @ 25°C :
- 7A Tc
- Transistor Application :
- SWITCHING
- Operating Temperature :
- -55°C~150°C TJ
- Rise Time :
- 50ns
- Series :
- QFET®
- Transistor Element Material :
- SILICON
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Terminations :
- 3
- Input Capacitance (Ciss) (Max) @ Vds :
- 1245pF @ 25V
- Published :
- 2004
- Gate Charge (Qg) (Max) @ Vgs :
- 36nC @ 10V
- Operating Mode :
- ENHANCEMENT MODE
- ECCN Code :
- EAR99
- Power Dissipation :
- 52W
- JEDEC-95 Code :
- TO-220AB
- RoHS Status :
- ROHS3 Compliant
- Drain Current-Max (Abs) (ID) :
- 7A
- JESD-609 Code :
- e3
- Pbfree Code :
- yes
- Number of Elements :
- 1
- Mount :
- Through Hole
- Height :
- 9.19mm
- Additional Feature :
- FAST SWITCHING
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Threshold Voltage :
- 4V
- Packaging :
- Tube
- Gate to Source Voltage (Vgs) :
- 30V
- Pulsed Drain Current-Max (IDM) :
- 28A
- Reach Compliance Code :
- not_compliant
- Case Connection :
- Isolated
- Resistance :
- 1.4Ohm
- Datasheets
- FQPF7N65C

N-Channel Tube 1.4 Ω @ 3.5A, 10V ±30V 1245pF @ 25V 36nC @ 10V TO-220-3 Full Pack
FQPF7N65C Description
The FQPF7N65C is an N-channel QFET? enhancement-mode power MOSFET produced using planar stripe and DMOS technology. This advanced MOSFET technology FQPF7N65C has been specially tailored to reduce ON-state resistance and to provide superior switching performance and high avalanche energy strength. The Onsemi FQPF7N65C is suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
FQPF7N65C Features
-
7A, 650V, RDS(on) = 1.4Ω(Max.) @VGS = 10 V, ID = 3.5A
-
Low gate charge ( Typ. 28nC)
-
Low Crss ( Typ. 12pF)
-
100% avalanche tested
-
In the TO-220-3 package
FQPF7N65C Applications
-
LCD TV
-
LED TV
-
Switched mode power supplies
-
Active power factor correction (PFC)
-
Electronic lamp ballasts
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