FQPF7N65C
- Mfr.Part #
- FQPF7N65C
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- POWER FIELD-EFFECT TRANSISTOR, 7
- Stock
- 4,012
- In Stock :
- 4,012
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Through Hole
- Contact Plating :
- Tin
- Packaging :
- Tube
- Height :
- 9.19mm
- Vgs (Max) :
- ±30V
- Package / Case :
- TO-220-3 Full Pack
- Series :
- QFET®
- Case Connection :
- Isolated
- REACH SVHC :
- No SVHC
- Weight :
- 2.27g
- Threshold Voltage :
- 4V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Number of Terminations :
- 3
- Qualification Status :
- Not Qualified
- Turn On Delay Time :
- 20 ns
- Length :
- 10.16mm
- Rise Time :
- 50ns
- Power Dissipation-Max :
- 52W Tc
- RoHS Status :
- ROHS3 Compliant
- Published :
- 2004
- Current - Continuous Drain (Id) @ 25°C :
- 7A Tc
- Number of Pins :
- 3
- Turn-Off Delay Time :
- 90 ns
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Fall Time (Typ) :
- 55 ns
- Operating Temperature :
- -55°C~150°C TJ
- ECCN Code :
- EAR99
- Gate to Source Voltage (Vgs) :
- 30V
- Power Dissipation :
- 52W
- Transistor Element Material :
- SILICON
- JEDEC-95 Code :
- TO-220AB
- FET Type :
- N-Channel
- Current Rating :
- 7A
- Drain to Source Breakdown Voltage :
- 650V
- Pulsed Drain Current-Max (IDM) :
- 28A
- Gate Charge (Qg) (Max) @ Vgs :
- 36nC @ 10V
- Resistance :
- 1.4Ohm
- Transistor Application :
- SWITCHING
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Reach Compliance Code :
- not_compliant
- Continuous Drain Current (ID) :
- 7A
- Width :
- 4.7mm
- Additional Feature :
- FAST SWITCHING
- Rds On (Max) @ Id, Vgs :
- 1.4 Ω @ 3.5A, 10V
- Mount :
- Through Hole
- Number of Elements :
- 1
- Input Capacitance (Ciss) (Max) @ Vds :
- 1245pF @ 25V
- Lead Free :
- Lead Free
- Pbfree Code :
- yes
- Drain Current-Max (Abs) (ID) :
- 7A
- Voltage - Rated DC :
- 650V
- JESD-609 Code :
- e3
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Element Configuration :
- Single
- Operating Mode :
- ENHANCEMENT MODE
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Datasheets
- FQPF7N65C
FQPF7N65C Documents

N-Channel Tube 1.4 Ω @ 3.5A, 10V ±30V 1245pF @ 25V 36nC @ 10V TO-220-3 Full Pack
FQPF7N65C Description
The FQPF7N65C is an N-channel QFET? enhancement-mode power MOSFET produced using planar stripe and DMOS technology. This advanced MOSFET technology FQPF7N65C has been specially tailored to reduce ON-state resistance and to provide superior switching performance and high avalanche energy strength. The Onsemi FQPF7N65C is suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
FQPF7N65C Features
-
7A, 650V, RDS(on) = 1.4Ω(Max.) @VGS = 10 V, ID = 3.5A
-
Low gate charge ( Typ. 28nC)
-
Low Crss ( Typ. 12pF)
-
100% avalanche tested
-
In the TO-220-3 package
FQPF7N65C Applications
-
LCD TV
-
LED TV
-
Switched mode power supplies
-
Active power factor correction (PFC)
-
Electronic lamp ballasts
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