FQPF7N65C
- Mfr.Part #
- FQPF7N65C
- Manufacturer
- onsemi
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 650V 7A TO220F
- Stock
- 4,012
- In Stock :
- 4,012
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Package / Case :
- TO-220-3 Full Pack
- Published :
- 2004
- Voltage - Rated DC :
- 650V
- Resistance :
- 1.4Ohm
- Threshold Voltage :
- 4V
- Packaging :
- Tube
- Fall Time (Typ) :
- 55 ns
- Mount :
- Through Hole
- Transistor Application :
- SWITCHING
- Gate to Source Voltage (Vgs) :
- 30V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- -55°C~150°C TJ
- Continuous Drain Current (ID) :
- 7A
- Number of Elements :
- 1
- Turn On Delay Time :
- 20 ns
- Reach Compliance Code :
- not_compliant
- Operating Mode :
- ENHANCEMENT MODE
- Turn-Off Delay Time :
- 90 ns
- Additional Feature :
- FAST SWITCHING
- JEDEC-95 Code :
- TO-220AB
- Rds On (Max) @ Id, Vgs :
- 1.4 Ω @ 3.5A, 10V
- Rise Time :
- 50ns
- Pulsed Drain Current-Max (IDM) :
- 28A
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- RoHS Status :
- ROHS3 Compliant
- Power Dissipation-Max :
- 52W Tc
- ECCN Code :
- EAR99
- REACH SVHC :
- No SVHC
- JESD-609 Code :
- e3
- Transistor Element Material :
- SILICON
- Weight :
- 2.27g
- FET Type :
- N-Channel
- Mounting Type :
- Through Hole
- Height :
- 9.19mm
- Drain Current-Max (Abs) (ID) :
- 7A
- Drain to Source Breakdown Voltage :
- 650V
- Length :
- 10.16mm
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Current Rating :
- 7A
- Pbfree Code :
- yes
- Lead Free :
- Lead Free
- Qualification Status :
- Not Qualified
- Series :
- QFET®
- Gate Charge (Qg) (Max) @ Vgs :
- 36nC @ 10V
- Vgs (Max) :
- ±30V
- Power Dissipation :
- 52W
- Case Connection :
- Isolated
- Contact Plating :
- Tin
- Number of Pins :
- 3
- Element Configuration :
- Single
- Input Capacitance (Ciss) (Max) @ Vds :
- 1245pF @ 25V
- Width :
- 4.7mm
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Current - Continuous Drain (Id) @ 25°C :
- 7A Tc
- Number of Terminations :
- 3
- Datasheets
- FQPF7N65C

N-Channel Tube 1.4 Ω @ 3.5A, 10V ±30V 1245pF @ 25V 36nC @ 10V TO-220-3 Full Pack
FQPF7N65C Description
The FQPF7N65C is an N-channel QFET? enhancement-mode power MOSFET produced using planar stripe and DMOS technology. This advanced MOSFET technology FQPF7N65C has been specially tailored to reduce ON-state resistance and to provide superior switching performance and high avalanche energy strength. The Onsemi FQPF7N65C is suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
FQPF7N65C Features
-
7A, 650V, RDS(on) = 1.4Ω(Max.) @VGS = 10 V, ID = 3.5A
-
Low gate charge ( Typ. 28nC)
-
Low Crss ( Typ. 12pF)
-
100% avalanche tested
-
In the TO-220-3 package
FQPF7N65C Applications
-
LCD TV
-
LED TV
-
Switched mode power supplies
-
Active power factor correction (PFC)
-
Electronic lamp ballasts
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