FQPF7N10

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Pbfree Code :

yes

Drain Current-Max (Abs) (ID) :

5.5A

Package / Case :

TO-220-3 Full Pack

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

Case Connection :

Isolated

Vgs(th) (Max) @ Id :

2V @ 250μA

Pulsed Drain Current-Max (IDM) :

22A

Pin Count :

3

RoHS Status :

ROHS3 Compliant

Transistor Element Material :

SILICON

FET Type :

N-Channel

Peak Reflow Temperature (Cel) :

Not Applicable

Transistor Application :

SWITCHING

Operating Temperature :

-55°C~175°C TJ

Configuration :

SINGLE WITH BUILT-IN DIODE

JESD-609 Code :

e3

Packaging :

Tube

Avalanche Energy Rating (Eas) :

50 mJ

DS Breakdown Voltage-Min :

100V

Terminal Finish :

MATTE TIN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

290pF @ 25V

Drain-source On Resistance-Max :

0.38Ohm

Rds On (Max) @ Id, Vgs :

350m Ω @ 2.75A, 10V

Surface Mount :

No

Additional Feature :

FAST SWITCHING

Drain to Source Voltage (Vdss) :

100V

Terminal Position :

Single

Mounting Type :

Through Hole

Number of Terminations :

3

Time@Peak Reflow Temperature-Max (s) :

Not Applicable

Current - Continuous Drain (Id) @ 25°C :

5.5A Tc

Power Dissipation-Max :

23W Tc

Qualification Status :

COMMERCIAL

Vgs (Max) :

±20V

Gate Charge (Qg) (Max) @ Vgs :

6nC @ 5V

Series :

QFET®

JESD-30 Code :

R-PSFM-T3

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Reach Compliance Code :

Unknown