FQPF7N10

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Drain-source On Resistance-Max :

0.38Ohm

Package / Case :

TO-220-3 Full Pack

Vgs(th) (Max) @ Id :

2V @ 250μA

FET Type :

N-Channel

Power Dissipation-Max :

23W Tc

Current - Continuous Drain (Id) @ 25°C :

5.5A Tc

Transistor Application :

SWITCHING

Number of Terminations :

3

Qualification Status :

COMMERCIAL

Pulsed Drain Current-Max (IDM) :

22A

Operating Mode :

ENHANCEMENT MODE

Surface Mount :

No

JESD-609 Code :

e3

Rds On (Max) @ Id, Vgs :

350m Ω @ 2.75A, 10V

RoHS Status :

ROHS3 Compliant

Pin Count :

3

Reach Compliance Code :

Unknown

Vgs (Max) :

±20V

Mounting Type :

Through Hole

Avalanche Energy Rating (Eas) :

50 mJ

Series :

QFET®

Number of Elements :

1

Case Connection :

Isolated

Drain Current-Max (Abs) (ID) :

5.5A

Drain to Source Voltage (Vdss) :

100V

Pbfree Code :

yes

Input Capacitance (Ciss) (Max) @ Vds :

290pF @ 25V

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Additional Feature :

FAST SWITCHING

Time@Peak Reflow Temperature-Max (s) :

Not Applicable

Configuration :

SINGLE WITH BUILT-IN DIODE

Gate Charge (Qg) (Max) @ Vgs :

6nC @ 5V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-30 Code :

R-PSFM-T3

Terminal Position :

Single

Operating Temperature :

-55°C~175°C TJ

Peak Reflow Temperature (Cel) :

Not Applicable

Terminal Finish :

MATTE TIN

DS Breakdown Voltage-Min :

100V

Packaging :

Tube

Transistor Element Material :

SILICON