FQPF6N80C

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Pbfree Code :

yes

Gate to Source Voltage (Vgs) :

30V

Vgs(th) (Max) @ Id :

5V @ 250μA

Package / Case :

TO-220-3 Full Pack

Published :

2003

Input Capacitance (Ciss) (Max) @ Vds :

1310pF @ 25V

REACH SVHC :

No SVHC

Threshold Voltage :

5V

Lead Free :

Lead Free

Factory Lead Time :

9 Weeks

Current - Continuous Drain (Id) @ 25°C :

5.5A Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Transistor Element Material :

SILICON

Lifecycle Status :

ACTIVE (Last Updated: 10 hours ago)

Turn-Off Delay Time :

47 ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Rds On (Max) @ Id, Vgs :

2.5 Ω @ 2.75A, 10V

Mount :

Through Hole

Packaging :

Tube

Fall Time (Typ) :

44 ns

Vgs (Max) :

±30V

Drain to Source Breakdown Voltage :

800V

Gate Charge (Qg) (Max) @ Vgs :

30nC @ 10V

JESD-609 Code :

e3

Continuous Drain Current (ID) :

5.5A

Case Connection :

Isolated

Number of Pins :

3

Power Dissipation-Max :

51W Tc

Turn On Delay Time :

26 ns

Height :

9.19mm

Terminal Finish :

Tin (Sn)

Operating Mode :

ENHANCEMENT MODE

Rise Time :

65ns

Width :

4.7mm

Pulsed Drain Current-Max (IDM) :

22A

Radiation Hardening :

No

Length :

10.16mm

FET Type :

N-Channel

Number of Terminations :

3

Transistor Application :

SWITCHING

Avalanche Energy Rating (Eas) :

680 mJ

Element Configuration :

Single

Operating Temperature :

-55°C~150°C TJ

Series :

QFET®

Resistance :

2.5Ohm

Weight :

2.27g

Power Dissipation :

51W

JEDEC-95 Code :

TO-220AB

Number of Elements :

1

Mounting Type :

Through Hole

Voltage - Rated DC :

800V

Current Rating :

5.5A

ECCN Code :

EAR99