FQPF6N80

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

51W Tc

Weight :

2.27g

Mounting Type :

Through Hole

Vgs(th) (Max) @ Id :

5V @ 250μA

Transistor Application :

SWITCHING

Length :

10.16mm

Gate Charge (Qg) (Max) @ Vgs :

30nC @ 10V

Radiation Hardening :

No

Turn On Delay Time :

26 ns

RoHS Status :

ROHS3 Compliant

Case Connection :

Isolated

Vgs (Max) :

±30V

FET Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain to Source Breakdown Voltage :

800V

Resistance :

2.5Ohm

Input Capacitance (Ciss) (Max) @ Vds :

1310pF @ 25V

Turn-Off Delay Time :

47 ns

Gate to Source Voltage (Vgs) :

30V

Width :

4.7mm

JEDEC-95 Code :

TO-220AB

Number of Terminations :

3

ECCN Code :

EAR99

Packaging :

Tube

Mount :

Through Hole

Height :

9.19mm

REACH SVHC :

No SVHC

Number of Elements :

1

Terminal Finish :

Tin (Sn)

Avalanche Energy Rating (Eas) :

680 mJ

Factory Lead Time :

9 Weeks

Lifecycle Status :

ACTIVE (Last Updated: 10 hours ago)

Pbfree Code :

yes

Published :

2003

Rise Time :

65ns

Operating Temperature :

-55°C~150°C TJ

Current - Continuous Drain (Id) @ 25°C :

5.5A Tc

Pulsed Drain Current-Max (IDM) :

22A

Power Dissipation :

51W

Package / Case :

TO-220-3 Full Pack

Lead Free :

Lead Free

Voltage - Rated DC :

800V

Transistor Element Material :

SILICON

Current Rating :

5.5A

Number of Pins :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Threshold Voltage :

5V

JESD-609 Code :

e3

Element Configuration :

Single

Continuous Drain Current (ID) :

5.5A

Fall Time (Typ) :

44 ns

Rds On (Max) @ Id, Vgs :

2.5 Ω @ 2.75A, 10V

Series :

QFET®